发明授权
US5422288A Method of doping a JFET region in a MOS-gated semiconductor device
失效
在MOS门控半导体器件中掺杂JFET区域的方法
- 专利标题： Method of doping a JFET region in a MOS-gated semiconductor device
- 专利标题（中）： 在MOS门控半导体器件中掺杂JFET区域的方法
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申请号： US246307申请日： 1994-05-19
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公开(公告)号： US5422288A公开(公告)日： 1995-06-06
- 发明人: John M. S. Neilson , Christopher L. Rexer , Carl F. Wheatley, Jr.
- 申请人： John M. S. Neilson , Christopher L. Rexer , Carl F. Wheatley, Jr.
- 申请人地址： FL Melbourne
- 专利权人： Harris Corporation
- 当前专利权人： Harris Corporation
- 当前专利权人地址： FL Melbourne
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8234 ; H01L29/08 ; H01L29/10 ; H01L29/739 ; H01L29/78 ; H01L21/265
摘要：
A MOS-gated semiconductor device may be manufactured by a process in which the neck region of the device is doped through a previously deposited polysilicon gate. In the method of the present invention, the dopant in the neck region of the device is not subjected to the same temperature history as the body dopant, thereby providing means to increase the ruggedness of the device and providing means by which the threshold voltage of the device may be controlled.
公开/授权文献
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