发明授权
- 专利标题: Bipolar ECL to inverted CMOS level translator
- 专利标题(中): 双极ECL反相CMOS电平转换器
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申请号: US165156申请日: 1993-12-10
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公开(公告)号: US5424658A公开(公告)日: 1995-06-13
- 发明人: Mark R. Sikkink , Terrance L. Bowman
- 申请人: Mark R. Sikkink , Terrance L. Bowman
- 申请人地址: MN Eagan
- 专利权人: Cray Research, Inc.
- 当前专利权人: Cray Research, Inc.
- 当前专利权人地址: MN Eagan
- 主分类号: H03K19/018
- IPC分类号: H03K19/018 ; H03K19/0185
摘要:
A level shifting circuit which can be implemented as part of a bipolar ECL integrated circuit, provides reliable switching and level shifted output suitable for driving a low voltage CMOS integrated circuit. The circuit includes a level shifting circuit which is connected to trigger a high gain positive feedback bootstrap circuit to reliably ensure switching even under poor signal conditions. An output taken from one of the switched pair is allowed to go to V.sub.CC, 0 volts, or is clamped by a clamping circuit to -3.3 volts, representing the two output states suitable for driving inverted rail CMOS circuitry.
公开/授权文献
- US4362218A Overload protection for a weigh scale having a flexure beam 公开/授权日:1982-12-07
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