发明授权
- 专利标题： Heat-resisting ohmic contact on semiconductor diamond layer
- 专利标题（中）： 半导体金刚石层上的耐热欧姆接触
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申请号： US189608申请日： 1994-02-01
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公开(公告)号： US5436505A公开(公告)日： 1995-07-25
- 发明人: Kazushi Hayashi , Takeshi Tachibana
- 申请人： Kazushi Hayashi , Takeshi Tachibana
- 申请人地址： JPX Kobe
- 专利权人： Kabushiki Kaisha Kobe Seiko Sho
- 当前专利权人： Kabushiki Kaisha Kobe Seiko Sho
- 当前专利权人地址： JPX Kobe
- 优先权： JPX5-021530 19930209
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L23/482 ; H01L29/16 ; H01L29/43 ; H01L29/45 ; H01L23/48 ; H01L29/40
摘要：
Disclosed is a heat-resistant ohmic contact formed on a semiconducting diamond. It has a contact Ti layer having a thickness of 10 to 70 .ANG. and a carbide layer generated by the reaction between the Ti layer and the semiconducting diamond layer. A diffusion prevention layer composed of at least one kind material selected from a group consisting of refractory metals including W, Mo, Au, Pt and Ta, refractory alloys including Ti-W, and refractory compounds including TiC and TiN is formed on the contact Ti layer. With this construction, the diffusion and the oxidation of Ti can be prevented.
公开/授权文献
- USD316512S Connector for picture frames or the like 公开/授权日：1991-04-30