公开(公告)号：US5479875A

公开(公告)日：1996-01-02

申请号：US278315

申请日：1994-07-21

申请人： Takeshi Tachibana ,  Kimitsugu Saito ,  Kazushi Hayashi ,  Kozo Nishimura ,  Rie Nakamura

发明人： Takeshi Tachibana ,  Kimitsugu Saito ,  Kazushi Hayashi ,  Kozo Nishimura ,  Rie Nakamura

IPC分类号： C30B25/02 ,  C23C16/02 ,  C23C16/27 ,  C30B25/10 ,  C30B29/04 ,  H01L31/10 ,  C30B23/08

CPC分类号： C23C16/274 ,  C23C16/02 ,  C23C16/278 ,  C30B25/105

摘要： A method of forming a highly oriented diamond film having a reduced thickness with a high quality at a low cost. Surface of a single crystal substrate is cleaned, and is then left in a high vacuum of 10.sup.-6 Torr or less at a temperature between room temperature and 800.degree. C. for 15 min for releasing gas molecules absorbed on the surface of the substrate. The surface of the substrate is then processed using carbon-containing plasma for forming a barrier of obstructing a carbon component within the substrate. After that, an electric field is applied across the substrate and plasma for allowing a current to flow thereacross for a specified time, to form nuclei of diamond for synthesis of a diamond film. Thus, highly oriented diamond particles or films, in which crystal orientations thereof are epitaxial to the substrate, are synthesized.

摘要翻译： 以低成本高质量地形成厚度减小的高取向金刚石膜的方法。 清洁单晶基板的表面，然后在室温至800℃的温度下放置10 -6乇以下的高真空15分钟，释放吸收在基板表面上的气体分子。 然后使用含碳等离子体处理衬底的表面，以形成阻挡衬底内的碳成分的阻挡层。 之后，将电场施加在衬底和等离子体上，以允许电流在其上跨越一定时间，以形成用于合成金刚石膜的金刚石核。 因此，合成了高取向度的金刚石颗粒或其中晶体取向向衬底外延的膜。

公开(公告)号：US5436505A

公开(公告)日：1995-07-25

申请号：US189608

申请日：1994-02-01

申请人： Kazushi Hayashi ,  Takeshi Tachibana

发明人： Kazushi Hayashi ,  Takeshi Tachibana

IPC分类号： H01L21/28 ,  H01L23/482 ,  H01L29/16 ,  H01L29/43 ,  H01L29/45 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L29/1602 ,  H01L23/4827 ,  H01L29/45 ,  H01L2924/0002

摘要： Disclosed is a heat-resistant ohmic contact formed on a semiconducting diamond. It has a contact Ti layer having a thickness of 10 to 70 .ANG. and a carbide layer generated by the reaction between the Ti layer and the semiconducting diamond layer. A diffusion prevention layer composed of at least one kind material selected from a group consisting of refractory metals including W, Mo, Au, Pt and Ta, refractory alloys including Ti-W, and refractory compounds including TiC and TiN is formed on the contact Ti layer. With this construction, the diffusion and the oxidation of Ti can be prevented.

摘要翻译： 公开了形成在半导体金刚石上的耐热欧姆接触。 它具有厚度为10至70的接触Ti层和通过Ti层和半导体金刚石层之间的反应产生的碳化物层。 由选自由W，Mo，Au，Pt和Ta的难熔金属组成的组中的至少一种材料，包括Ti-W的耐火合金和包含TiC和TiN的耐火材料组成的扩散防止层形成在接触Ti 层。 利用这种结构，可以防止Ti的扩散和氧化。

公开(公告)号：US07311977B2

公开(公告)日：2007-12-25

申请号：US11281607

申请日：2005-11-18

申请人： Yoshihiro Yokota ,  Kazushi Hayashi ,  Takeshi Tachibana ,  Koji Kobashi

发明人： Yoshihiro Yokota ,  Kazushi Hayashi ,  Takeshi Tachibana ,  Koji Kobashi

IPC分类号： B32B9/04 ,  B32B13/04

CPC分类号： C30B29/04 ,  C23C16/0272 ,  C23C16/274 ,  C23C16/277 ,  C23C16/279 ,  C30B25/105 ,  H01L29/045 ,  H01L29/1602 ,  Y10T428/30

摘要： A highly-oriented diamond film which has a flat surface but does not have non-oriented crystals in the surface can be provided by depositing a first diamond layer on a substrate by {111} sector growth of diamond crystals by a CVD method using a gaseous mixture of methane and hydrogen as material gas, and then depositing a second diamond layer on the first diamond layer by {100} sector growth of diamond crystals by a plasma CVD method using a gaseous mixture of methane, hydrogen, and oxygen as material gas under the conditions that the pressure of the material gas is 133 hPa or more; the material gas composition is determined such that ([C]−[O])/[CH3+H2+O2] is −0.2×10−2 or more and [O]/[C] is 1.2 or less; and the substrate temperature is between 750° C. and 1000° C.

摘要翻译： 具有平坦表面但不具有表面未取向晶体的高取向金刚石薄膜可以通过使用气相色谱法（CVD）在金刚石晶体的{111}扇形生长之后，在基底上沉积第一金刚石层来提供 甲烷和氢气的混合物作为材料气体，然后通过使用甲烷，氢气和氧气的气体混合物的等离子体CVD方法通过{100}金刚石晶体的扇形生长在第一金刚石层上沉积第二金刚石层作为原料气体 材料气体压力为133hPa以上的条件; 确定材料气体组成使得（[C] - [O]）/ [CH 3/3 + H 2 + O 2]是 -0.2×10 -2以上，[O] / [C]为1.2以下。 并且衬底温度在750℃和1000℃之间。

公开(公告)号：US20060001029A1

公开(公告)日：2006-01-05

申请号：US11168875

申请日：2005-06-29

申请人： Kazushi Hayashi ,  Takeshi Tachibana ,  Yoshihiro Yokota ,  Nobuyuki Kawakami

发明人： Kazushi Hayashi ,  Takeshi Tachibana ,  Yoshihiro Yokota ,  Nobuyuki Kawakami

IPC分类号： H01L29/15

CPC分类号： H01L31/028 ,  G01J1/429 ,  H01L31/09 ,  H01L31/1085 ,  Y02E10/547

摘要： A diamond element is mounted on an insulating base material having a thickness of not more than 3 mm provided with one pair of metal interconnects. In the diamond element, an insulating diamond layer to act as a detection layer is deposited on a substrate, and one pair of interdigitated electrodes are deposited on the surface of this insulating diamond layer. The interdegital electrodes of the diamond element are connected via wires to the metal interconnects deposited on the insulating base material. The insulating base material may transmit ultraviolet radiation to be detected. The diamond sensor is capable of stably detecting ultraviolet radiation even when the distance between a lamp and an irradiation object is short.

摘要翻译： 金刚石元件安装在具有一对金属互连件的厚度不大于3mm的绝缘基材上。 在金刚石元件中，作为检测层的绝缘金刚石层沉积在基板上，并且在绝缘金刚石层的表面上沉积一对交叉指向的电极。 金刚石元件的三角形电极通过导线连接到沉积在绝缘基材上的金属互连。 绝缘基材可以透射待检测的紫外线。 即使当灯和照射物体之间的距离短时，金刚石传感器也能够稳定地检测紫外线辐射。

公开(公告)号：US5424561A

公开(公告)日：1995-06-13

申请号：US305791

申请日：1994-09-08

申请人： Takeshi Tachibana ,  Kazushi Hayashi ,  Koji Kobashi ,  Bradley A. Fox ,  Jesko A. von Windheim ,  David L. Dreifus ,  Brian R. Stoner

发明人： Takeshi Tachibana ,  Kazushi Hayashi ,  Koji Kobashi ,  Bradley A. Fox ,  Jesko A. von Windheim ,  David L. Dreifus ,  Brian R. Stoner

IPC分类号： G01R33/07 ,  C30B25/02 ,  C30B29/04 ,  H01L43/06 ,  H01L43/10 ,  H01L27/22 ,  H01L29/82 ,  H01L43/00

CPC分类号： H01L43/065

摘要： A magnetic sensor element using highly-oriented diamond film comprises a magnetic detecting part, at least a pair of main current electrodes for flowing a main current and generating the Hall electromotive force at the magnetic detecting part, and detection electrodes for detecting said Hall electromotive force. Said magnetic detecting part is formed of a highly-oriented diamond film grown by chemical vapor deposition, at least 90% of which consists of either (100) or (111) crystal planes. Between the adjacent crystal planes, the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of the Euler angles {.alpha., .beta., .gamma.} which represent the orientation of the crystal planes, satisfy the following relations simultaneously: .vertline..DELTA..alpha..vertline..ltoreq.10.degree., .vertline..DELTA..beta..vertline..ltoreq.10.degree. and .vertline..DELTA..gamma..vertline..ltoreq.10 .degree.. The magnetic sensor element using highly-oriented diamond film has a high heat stability and sufficiently high level of magnetic field sensitivity to be used practically, enabling to expand the surface area and to increase the integration of the element and to measure magnetic field over a wide area and a large space.

摘要翻译： 使用高取向金刚石膜的磁传感器元件包括磁检测部，至少一对主电流电极，用于使主电流流动并在磁检测部产生霍尔电动势，以及检测电极，用于检测所述霍尔电动势 。 所述磁检测部分由化学气相沉积生长的高取向金刚石膜形成，其中至少90％由（100）或（111）晶面构成。 在相邻的晶面之间，表示晶面取向的欧拉角{α，β，γ}的差异{DELTA alpha，DELTAβ，DELTA gamma}同时满足以下关系： DELTA alpha |

公开(公告)号：US20060175293A1

公开(公告)日：2006-08-10

申请号：US11328162

申请日：2006-01-10

申请人： Takeshi Tachibana ,  Kazushi Hayashi ,  Yoshihiro Yokota ,  Koji Kobashi ,  Takashi Kobori

发明人： Takeshi Tachibana ,  Kazushi Hayashi ,  Yoshihiro Yokota ,  Koji Kobashi ,  Takashi Kobori

IPC分类号： B44C1/22 ,  C23F1/00 ,  C03C15/00

CPC分类号： H01L21/022 ,  C23C16/01 ,  C23C16/274 ,  C23C16/278 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02123 ,  H01L21/0405 ,  H01L21/3146 ,  H01L21/76256 ,  H01L2221/68363

摘要： A method for manufacturing a multilayered substrate for a semiconductor device, as well as a semiconductor device, is provided, the multilayered substrate exhibiting an excellent thermal conduction property and an excellent heat spreading effect without occurrence of warp and deformation. A diamond layer is formed through vapor phase deposition on one principal surface of a first silicon substrate by a CVD method. A SiO2 layer is formed on this diamond layer. A SiO2 layer is formed on a surface of a second silicon substrate by a thermal oxidation method. The diamond layer is bonded to the second silicon substrate with SiO2 layers disposed on both the diamond layer and the second silicon substrate therebetween. The first silicon substrate is removed by dissolution through etching to expose the surface of the diamond layer. A silicon layer serving as a semiconductor layer is formed on the diamond layer by a CVD method.

摘要翻译： 提供一种半导体装置用多层基板的制造方法以及半导体装置，该多层基板具有优异的导热性和优异的散热效果，而不发生翘曲变形。 通过CVD方法通过气相沉积在第一硅衬底的一个主表面上形成金刚石层。 在该金刚石层上形成SiO 2层。 通过热氧化法在第二硅衬底的表面上形成SiO 2层。 金刚石层与设置在金刚石层和第二硅衬底之间的SiO 2层结合到第二硅衬底。 通过蚀刻溶解去除第一硅衬底以暴露金刚石层的表面。 通过CVD法在金刚石层上形成用作半导体层的硅层。

公开(公告)号：US07064352B2

公开(公告)日：2006-06-20

申请号：US11003510

申请日：2004-12-06

申请人： Yoshihiro Yokota ,  Nobuyuki Kawakami ,  Takeshi Tachibana ,  Kazushi Hayashi

发明人： Yoshihiro Yokota ,  Nobuyuki Kawakami ,  Takeshi Tachibana ,  Kazushi Hayashi

IPC分类号： H01L31/312 ,  H01L21/00

CPC分类号： H01L29/1602 ,  H01L29/78

摘要： A diamond semiconductor device includes a substrate made of single crystal diamond; a first diamond layer, placed on the substrate, containing an impurity; a second diamond layer containing the impurity, the second diamond layer being placed on the substrate and spaced from the first diamond layer; and a third diamond layer which has a impurity content less than that of the first and second diamond layers, which acts as a channel region, and through which charges are transferred from the first diamond layer to the second diamond layer. The first and second diamond layers have a first and a second end portion, respectively, facing each other with a space located therebetween. The first and second end portions have slopes epitaxially formed depending on the orientation of the substrate. The third diamond layer lies over the slopes and a section of the substrate that is located under the space.

摘要翻译： 金刚石半导体器件包括由单晶金刚石制成的衬底; 第一金刚石层，放置在衬底上，含有杂质; 含有所述杂质的第二金刚石层，所述第二金刚石层被放置在所述基板上并与所述第一金刚石层间隔开; 以及第三金刚石层，其杂质含量小于作为沟道区的第一和第二金刚石层的杂质含量，并且电荷从第一金刚石层转移到第二金刚石层。 第一和第二金刚石层具有彼此面对的第一和第二端部，其间具有空间。 第一和第二端部具有取决于衬底的取向外延形成的斜面。 第三金刚石层位于斜坡上方，并且位于该空间下方的基底部分。

公开(公告)号：US20050181122A1

公开(公告)日：2005-08-18

申请号：US11057603

申请日：2005-02-15

申请人： Kazushi Hayashi ,  Takeshi Tachibana ,  Yoshihiro Yokota ,  Nobuyuki Kawakami

发明人： Kazushi Hayashi ,  Takeshi Tachibana ,  Yoshihiro Yokota ,  Nobuyuki Kawakami

IPC分类号： H01L31/08 ,  G01J1/02 ,  G01J1/42 ,  H01L31/101 ,  C23C14/00

CPC分类号： G01J1/429 ,  G01J2001/0276 ,  H01L31/028 ,  H01L31/09 ,  H01L31/1085 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/10253 ,  H01L2924/12032 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00

摘要： An ultraviolet sensor includes a substrate; a diamond layer, placed on the substrate, functioning as a detector; and at least one pair of surface electrodes arranged on the diamond layer. The diamond layer has a detecting region present at the surface thereof, the detecting region has at least one sub-region exposed from the surface electrodes, and the sub-region has a covering layer, made of oxide or fluoride, lying thereon. A method for manufacturing the ultraviolet sensor includes a step of forming a diamond layer, functioning as a detector, on a substrate; a step of forming at least one pair of surface electrodes on the diamond layer; and a step of forming a covering layer, made of oxide or fluoride, on at least one sub-region of a detecting region present at the surface of the diamond layer, the sub-region being exposed from the surface electrodes.

摘要翻译： 紫外线传感器包括基板; 金刚石层，放置在基板上，用作检测器; 以及布置在金刚石层上的至少一对表面电极。 金刚石层的表面存在检测区域，检测区域具有从表面电极露出的至少一个子区域，并且子区域具有由氧化物或氟化物构成的覆盖层。 紫外线传感器的制造方法包括在基板上形成用作检测器的金刚石层的工序; 在金刚石层上形成至少一对表面电极的步骤; 以及在存在于金刚石层的表面的检测区域的至少一个子区域上形成由氧化物或氟化物构成的覆盖层的步骤，该子区域从表面电极露出。

公开(公告)号：US06198218B1

公开(公告)日：2001-03-06

申请号：US09215297

申请日：1998-12-18

申请人： Koji Kobashi ,  Yoshihiro Yokota ,  Takeshi Tachibana ,  Kazushi Hayashi ,  Maki Hamaguchi ,  Katsumi Yoshino

发明人： Koji Kobashi ,  Yoshihiro Yokota ,  Takeshi Tachibana ,  Kazushi Hayashi ,  Maki Hamaguchi ,  Katsumi Yoshino

IPC分类号： H01J162

CPC分类号： H01L51/5012

摘要： An organic LED is provided that can stably and efficiently emit light as a result of a heat resistant hole drift layer. The organic LED can include, in order, a substrate, a hole injection electrode layer, a hole drift layer, an organic light emitting layer, an electron drift layer and an electron injection electrode layer. The hole drift layer comprises a diamond film with a boron concentration of between about 1.0×1019 and about 1.0×1021/cm3. An optically transparent layer can be formed on the electron injection electrode layer.

摘要翻译： 提供能够由于耐热孔漂移层而稳定且有效地发光的有机LED。 有机LED可以依次包括基板，空穴注入电极层，空穴漂移层，有机发光层，电子漂移层和电子注入电极层。 孔漂移层包括硼浓度在约1.0×1019至约1.0×10 21 / cm 3之间的金刚石膜。 可以在电子注入电极层上形成光透明层。

公开(公告)号：US20100219350A1

公开(公告)日：2010-09-02

申请号：US12223074

申请日：2007-02-27

申请人： Koji Kobashi ,  Takeshi Tachibana ,  Yoshihiro Yokota ,  Kazushi Hayashi

发明人： Koji Kobashi ,  Takeshi Tachibana ,  Yoshihiro Yokota ,  Kazushi Hayashi

IPC分类号： G01T1/202 ,  C09K11/65

CPC分类号： G01T1/29 ,  C23C16/0254 ,  C23C16/274 ,  C23C16/277

摘要： A beam detector and a beam monitor using the same are provided, the beam detector being capable of precisely and stably detecting, for a long period of time, the position, the intensity distribution, and the change with time of radiation beams, soft x-ray beams, and the like and being manufactured at a low cost as compared to that of a conventional detection device.In a beam detector 2 for detecting the position and intensity of beams, a beam irradiation portion 6 to be irradiated with beams 7 is formed of a polycrystalline diamond (C) film 4 containing at least one element (X) selected from the group consisting of silicon (Si), nitrogen (N), lithium (Li), beryllium (Be), boron (B), phosphorus (P), sulfur (S), nickel (Ni), and vanadium (V) at an X/C of 0.1 to 1,000 ppm, and this polycrystalline diamond film 4 has a light emission function of performing light emissions 8 and 8a when it is irradiated with the beams 7. By the beam detector 2 as described above and light emission observation means 3 and 3a for observing the above light emission phenomenon, a beam monitor 1 is formed.

摘要翻译： 提供了一种使用其的光束检测器和光束监视器，该光束检测器能够长时间精确而稳定地检测位置，强度分布以及辐射束随时间的变化， 射线束等，并且与传统的检测装置相比以低成本制造。 在用于检测光束的位置和强度的光束检测器2中，用光束7照射的光束照射部分6由多晶金刚石（C）膜4形成，该多晶金刚石（C）膜4包含至少一种选自以下的元素（X）： 在X / C下，硅（Si），氮（N），锂（Li），铍（Be），硼（B），磷（P），硫（S），镍（Ni）和钒 为0.1〜1000ppm，并且该多晶金刚石膜4具有在用光束7照射时进行发光8和8a的发光功能。通过如上所述的光束检测器2和发光观察装置3和3a， 观察上述发光现象，形成光束监视器1。