发明授权
US5438018A Method of making semiconductor device by selective epitaxial growth
失效
通过选择性外延生长制造半导体器件的方法
- 专利标题： Method of making semiconductor device by selective epitaxial growth
- 专利标题（中）： 通过选择性外延生长制造半导体器件的方法
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申请号： US162703申请日： 1993-12-07
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公开(公告)号： US5438018A公开(公告)日： 1995-08-01
- 发明人: Toshihiko Mori , Yoshiki Sakuma
- 申请人： Toshihiko Mori , Yoshiki Sakuma
- 申请人地址： JPX Kanagawa
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX4-326944 19921207
- 主分类号： H01L29/205
- IPC分类号： H01L29/205 ; H01L21/20 ; H01L21/331 ; H01L21/822 ; H01L21/8252 ; H01L27/06 ; H01L27/10 ; H01L29/68 ; H01L29/73
摘要：
A selective growth mask having a plurality of openings is formed on a semiconductor substrate. Desired epitaxially grown regions are formed on the openings by controlling the upward epitaxial growth from the openings. Two resonance tunnel barrier diodes are formed on respective separated two epitaxially grown regions and connected together. Thereafter, a tunnel barrier diode is formed on the connected two resonance tunnel barrier diodes to form a composite element having an SRAM function. A number of composite functional elements can be integrally formed on a semiconductor substrate by selective growth and a small number of fine processes.
公开/授权文献
- US4937170A Coupling agents for photographic elements 公开/授权日：1990-06-26
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