Invention Grant
- Patent Title: Method for producing a silicon technology transistor on a nonconductor
- Patent Title (中): 在非导体上制造硅技术晶体管的方法
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Application No.: US274452Application Date: 1994-07-13
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Publication No.: US5439836APublication Date: 1995-08-08
- Inventor: Benoit Giffard
- Applicant: Benoit Giffard
- Applicant Address: FRX Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FRX Paris
- Priority: FRX9309021 19930722
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336 ; H01L29/786 ; H01L21/86
Abstract:
Method for producing a silicon technology transistor on a nonconductor. This method consists in particular of forming a thin film of silicon (6) on a nonconductor (4) and then a mask (8, 10) including one opening (13) at the location provided for the channel (26) of the transistor; of locally oxidizing (14) the unmasked silicon to form an oxidation film; of eliminating the mask; of forming source (18) and drain (20) regions in the silicon by ion implantation with the oxidation film being used to mask this implantation; of eliminating the oxidation film; and of forming a thin gate nonconductor between the source and the drain and then forming the gate.
Public/Granted literature
- US4408681A Disc brake Public/Granted day:1983-10-11
Information query
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