公开(公告)号：US09245915B2

公开(公告)日：2016-01-26

申请号：US13882441

申请日：2011-11-03

Applicant: Benoit Giffard ,  Yvon Cazaux ,  Norbert Moussy

Inventor： Benoit Giffard ,  Yvon Cazaux ,  Norbert Moussy

IPC: H01L27/146 ,  H01L31/18 ,  H01L31/0216

CPC classification number: H01L27/14643 ,  H01L27/14621 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14649 ,  H01L27/14694 ,  H01L31/02165 ,  H01L31/18

Abstract: The invention relates to a radiation detection device including a silicon substrate and an infrared photodiode made of a material optimized for infrared detection. The substrate comprises a photosensitive area, readout circuits, and interconnects formed in an electrically-insulating material. The interconnects and the metal contact connect the readout circuits, the photosensitive areas, and the infrared photodiode. The detection device also comprises an infrared radiation filtering structure which covers the photosensitive area without covering the infrared photodiode.

Abstract translation: 本发明涉及一种辐射检测装置，其包括硅基板和红外光电二极管，该红外光电二极管由优化用于红外检测的材料制成 衬底包括形成在电绝缘材料中的感光区域，读出电路和互连。 互连和金属触点连接读出电路，感光区域和红外光电二极管。 检测装置还包括覆盖感光区而不覆盖红外光电二极管的红外辐射滤波结构。

公开(公告)号：US06541839B1

公开(公告)日：2003-04-01

申请号：US09486063

申请日：2000-03-10

Applicant: Benoit Giffard

Inventor： Benoit Giffard

IPC: H01L21265

CPC classification number: H01L21/763

Abstract: A microelectronic structure with a low voltage part and high voltage part, such that the low voltage part is protected against the high voltage part and process of obtaining this protection. The structure includes at least one low-voltage element (2) and at least high-voltage element (4) formed on a semi-conductor substrate (6). According to the invention, at least one channel (18) is formed, passing through the low-voltage element and one semi-conductor zone is formed with doping opposite to that of the substrate, at least around the walls of the channel or channels and a contact point (24) is established in this zone. Application to smart power integrated circuits.

Abstract translation: 具有低电压部分和高电压部分的微电子结构，使得低电压部分受到高压部分的保护和获得该保护的过程。该结构包括至少一个低电压元件（2）和至少高 电压元件（4）形成在半导体衬底（6）上。 根据本发明，形成至少一个通道（18），穿过低电压元件，并且至少在通道或通道的壁周围形成一个半导体区域，其具有与衬底相反的掺杂， 在该区域中建立接触点（24）。 应用于智能电力集成电路。

公开(公告)号：US6061219A

公开(公告)日：2000-05-09

申请号：US113463

申请日：1998-07-10

Applicant: Benoit Giffard

Inventor： Benoit Giffard

IPC: H01L27/04 ,  H01L21/822 ,  H02H9/02 ,  H02H9/00

CPC classification number: H02H9/025

Abstract: Device for the protection of an electrical load. A branch (4) connects an input terminal (1) to an output terminal (2). The branch includes in series:a channel of a first transistor (10) of the "normally on" type anda channel of a second transistor (20) of the "normally on" type of a second conductivity type. A gate (10g) of the first transistor (10) is connected to the output terminal (2) and a gate (20g) of the second transistor (20) is connected to the input terminal (1) by means of a third "normally on" transistor (30) of the first conductivity type. A gate (30g) is connected to a node (6) between the channels of the first and second transistors. The device has application to the protection of electronic components.

Abstract translation: 用于保护电气负载的装置。 分支（4）将输入端（1）连接到输出端（2）。 该分支包括：“通常”类型的第一晶体管（10）的沟道和第二导电类型的“常开”型的第二晶体管（20）的沟道。 第一晶体管（10）的栅极（10g）连接到输出端子（2），第二晶体管（20）的栅极（20g）通过第三“正常”连接到输入端子 在第一导电类型的“晶体管（30）上。 栅极（30g）连接到第一和第二晶体管的通道之间的节点（6）。 该器件具有应用于电子元件的保护。

公开(公告)号：US09880057B2

公开(公告)日：2018-01-30

申请号：US13882944

申请日：2011-11-03

Applicant: Yvon Cazaux ,  Benoit Giffard ,  Xavier Hugon

Inventor： Yvon Cazaux ,  Benoit Giffard ,  Xavier Hugon

IPC: G01J5/08 ,  H01L27/146 ,  H01L27/144

CPC classification number: G01J5/0862 ,  H01L27/144 ,  H01L27/14621 ,  H01L27/14647

Abstract: The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigmented resin filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with a resin filter opaque to visible radiation. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors.

公开(公告)号：US20120097946A1

公开(公告)日：2012-04-26

申请号：US13381435

申请日：2010-07-05

Applicant: Pierre Gidon ,  Benoit Giffard ,  Norbert Moussy

Inventor： Pierre Gidon ,  Benoit Giffard ,  Norbert Moussy

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14647 ,  H01L27/14603 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H01L31/022408

Abstract: A photo-detecting device including a plurality of pixels, each including at least one alternate stack of photodiodes and electrically conducting electrodes. Each photodiode includes one intrinsic amorphous semiconductor layer in contact with one doped amorphous semiconductor layer distinct from the amorphous semiconductor layers in other photodiodes, and is arranged between two electrodes. Each pair of photodiodes includes one of the electrodes arranged between photodiodes. In each pixel: each electrode includes an electrically conducting portion not superposed on other electrodes of the pixel and electrically connected to one interconnection hole filled with an electrically conducting material; and portions of an electrically conducting material are superposed approximately on each of non-superposed portions of electrodes.

Abstract translation: 一种光检测装置，包括多个像素，每个像素包括至少一个交替的光电二极管和导电电极。 每个光电二极管包括与其它光电二极管中的非晶半导体层不同的一个掺杂非晶半导体层接触的本征非晶半导体层，并且布置在两个电极之间。 每对光电二极管包括布置在光电二极管之间的电极之一。 在每个像素中：每个电极包括不叠置在像素的其他电极上的导电部分，并且电连接到填充有导电材料的一个互连孔; 并且导电材料的部分大致重叠在电极的非重叠部分中的每一个上。

公开(公告)号：US09040916B2

公开(公告)日：2015-05-26

申请号：US13882914

申请日：2011-11-03

Applicant: Yvon Cazaux ,  Benoit Giffard ,  Xavier Hugon

Inventor： Yvon Cazaux ,  Benoit Giffard ,  Xavier Hugon

IPC: G01J5/20 ,  H01L27/14 ,  H01L31/00 ,  H01L27/146 ,  H01L31/18

CPC classification number: G01J5/20 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H01L27/14685 ,  H01L27/1469 ,  H01L31/18

Abstract: The visible and near-infrared radiation detector includes a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and three interference filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, has no filter. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. Each interference filter includes an alternation of metal layers and of dielectric layers.

Abstract translation: 可见光和近红外辐射检测器包括近红外感光元件，用于读取近红外感光元件的读出电路，四个可见感光元件，其中一个面向近红外光敏元件放置，三个干涉滤光片 定义像素四元组。 包括近红外光敏元件和可见感光元件之一的第一像素没有滤光片。 分别包含三个可见感光元件的三个其他像素分别设置有与三原色相关联的滤光片。 每个干涉滤光器包括金属层和电介质层的交替。

公开(公告)号：US20130284889A1

公开(公告)日：2013-10-31

申请号：US13882441

申请日：2011-11-03

Applicant: Benoit Giffard ,  Yvon Cazaux ,  Norbert Moussy

Inventor： Benoit Giffard ,  Yvon Cazaux ,  Norbert Moussy

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14643 ,  H01L27/14621 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14649 ,  H01L27/14694 ,  H01L31/02165 ,  H01L31/18

Abstract: The invention relates to a radiation detection device including a silicon substrate and an infrared photodiode made of a material optimized for infrared detection. The substrate comprises a photosensitive area, readout circuits, and interconnects formed in an electrically-insulating material. The interconnects and the metal contact connect the readout circuits, the photosensitive areas, and the infrared photodiode. The detection device also comprises an infrared radiation filtering structure which covers the photosensitive area without covering the infrared photodiode.

Abstract translation: 本发明涉及一种辐射检测装置，其包括硅基板和红外光电二极管，该红外光电二极管由优化用于红外检测的材料制成 衬底包括形成在电绝缘材料中的感光区域，读出电路和互连。 互连和金属触点连接读出电路，感光区域和红外光电二极管。 检测装置还包括覆盖感光区而不覆盖红外光电二极管的红外辐射滤波结构。

公开(公告)号：US20130214160A1

公开(公告)日：2013-08-22

申请号：US13882914

申请日：2011-11-03

Applicant: Yvon Cazaux ,  Benoit Giffard ,  Xavier Hugon

Inventor： Yvon Cazaux ,  Benoit Giffard ,  Xavier Hugon

IPC: G01J5/20 ,  H01L31/18 ,  H01L27/146

CPC classification number: G01J5/20 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H01L27/14685 ,  H01L27/1469 ,  H01L31/18

Abstract: The visible and near-infrared radiation detector includes a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and three interference filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, has no filter. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. Each interference filter includes an alternation of metal layers and of dielectric layers.

Abstract translation: 可见光和近红外辐射检测器包括近红外感光元件，用于读取近红外感光元件的读出电路，四个可见感光元件，其中一个面向近红外光敏元件放置，三个干涉滤光片 定义像素四元组。 包括近红外光敏元件和可见感光元件之一的第一像素没有滤光片。 分别包含三个可见感光元件的三个其他像素分别设置有与三原色相关联的滤光片。 每个干涉滤光器包括金属层和电介质层的交替。

公开(公告)号：US4954989A

公开(公告)日：1990-09-04

申请号：US335732

申请日：1989-04-10

Applicant: Andre-Jacques Auberton-Herve ,  Benoit Giffard

Inventor： Andre-Jacques Auberton-Herve ,  Benoit Giffard

IPC: G11C11/411 ,  G11C7/00 ,  G11C11/40 ,  H01L27/10

CPC classification number: G11C11/40 ,  G11C7/005

Abstract: A static memory cell of the metal-insulator-semiconductor type, which can be used in the microelectronics field for producing random access memories for storing binary information. This MIS type memory cell is a random access static memory cell known under the abbreviation SRAM. A bistable flip-flop is formed by a MIS transistor and a parasitic bipolar transistor. The source and drain of the MIS transistor respectively formed by constituting the emitter and collector of the bipolar transistor. The region of the channel of the MIS transistor located between the source and drain serves as the base for the bipolar transistor. The base is completely isolated from the outside of the memory cell. The gate electrode of the MIS transistor is electrically isolated from the region of the channel. There is an addressing circuit for the flip-flop for storing binary information in the form of the absence or presence of current.

Abstract translation: 金属 - 绝缘体 - 半导体类型的静态存储单元，其可以用于微电子领域中，用于产生用于存储二进制信息的随机存取存储器。 这种MIS型存储单元是在缩写SRAM下面已知的随机存取静态存储单元。 双稳态触发器由MIS晶体管和寄生双极晶体管形成。 分别通过构成双极晶体管的发射极和集电极形成的MIS晶体管的源极和漏极。 位于源极和漏极之间的MIS晶体管的沟道的区域用作双极晶体管的基极。 基座与存储单元的外部完全隔离。 MIS晶体管的栅电极与沟道的区域电隔离。 存在用于以不存在或存在电流的形式存储二进制信息的触发器的寻址电路。

公开(公告)号：US08835924B2

公开(公告)日：2014-09-16

申请号：US13381435

申请日：2010-07-05

Applicant: Pierre Gidon ,  Benoit Giffard ,  Norbert Moussy

Inventor： Pierre Gidon ,  Benoit Giffard ,  Norbert Moussy

IPC: H01L29/04 ,  H01L27/146 ,  H01L31/0224

CPC classification number: H01L27/14647 ,  H01L27/14603 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H01L31/022408

Abstract: A photo-detecting device including a plurality of pixels, each including at least one alternate stack of photodiodes and electrically conducting electrodes. Each photodiode includes one intrinsic amorphous semiconductor layer in contact with one doped amorphous semiconductor layer distinct from the amorphous semiconductor layers in other photodiodes, and is arranged between two electrodes. Each pair of photodiodes includes one of the electrodes arranged between photodiodes. In each pixel: each electrode includes an electrically conducting portion not superposed on other electrodes of the pixel and electrically connected to one interconnection hole filled with an electrically conducting material; and portions of an electrically conducting material are superposed approximately on each of non-superposed portions of electrodes.

Abstract translation: 一种光检测装置，包括多个像素，每个像素包括至少一个交替的光电二极管和导电电极。 每个光电二极管包括与其它光电二极管中的非晶半导体层不同的一个掺杂非晶半导体层接触的本征非晶半导体层，并且布置在两个电极之间。 每对光电二极管包括布置在光电二极管之间的电极之一。 在每个像素中：每个电极包括不叠置在像素的其他电极上的导电部分，并且电连接到填充有导电材料的一个互连孔; 并且导电材料的部分大致重叠在电极的非重叠部分中的每一个上。