发明授权
- 专利标题： Thin-film transistor with suppressed off-current and V.sub.th
- 专利标题（中）： 具有抑制截止电流和Vth + B的薄膜晶体管
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申请号： US198058申请日： 1994-02-18
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公开(公告)号： US5440168A公开(公告)日： 1995-08-08
- 发明人: Hisayuki Nishimura , Shigeto Maegawa , Shigenobu Maeda
- 申请人： Hisayuki Nishimura , Shigeto Maegawa , Shigenobu Maeda
- 申请人地址： JPX both of JPX both of
- 专利权人： Ryoden Semiconductor System Engineering Corporation,Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Ryoden Semiconductor System Engineering Corporation,Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX both of JPX both of
- 优先权： JPX5-031811 19930222; JPX5-296592 19931126
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/786 ; H01L27/00 ; H01L29/78
摘要：
A thin-film transistor (3, 5a, 5b and 5c) is covered with a first silicon nitride film (9) formed by an LPCVD method. A first silicon oxide film (6) is formed on the first silicon nitride film (9). A second silicon nitride film (7), i.e., passivation film which is formed by a plasma CVD method is provided on the first silicon oxide film (6). In addition, the thin-film transistor includes a semiconductor layer covering a gate electrode. The semiconductor layer includes source, drain and active regions. The active region preferably includes a smaller amount of fluorine than the gate electrode.
公开/授权文献
- US4988171A Imaging device and endoscope system provided with the same 公开/授权日：1991-01-29
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