Invention Grant
- Patent Title: Room-temperature tunneling hot-electron transistor
- Patent Title (中): 室温隧道热电子晶体管
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Application No.: US178676Application Date: 1994-01-07
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Publication No.: US5442194APublication Date: 1995-08-15
- Inventor: Theodore S. Moise
- Applicant: Theodore S. Moise
- Applicant Address: TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: TX Dallas
- Main IPC: H01L29/68
- IPC: H01L29/68 ; H01L29/06 ; H01L29/205 ; H01L29/76 ; H01L29/161 ; H01L27/12 ; H01L29/72
Abstract:
A hot-electron transistor (10) is formed on substrate (12) having an outer surface. The present transistor includes subcollector layer (14) comprising Indium Gallium Arsenide formed outwardly from the outer surface of substrate (12). Collector barrier layer (18) comprising Indium Aluminum Gallium Arsenide is outwardly formed from subcollector layer (14), and collector barrier layer (18) minimizes leakage current in transistor (10). Outwardly from collector barrier layer (18) is formed base layer (20) comprising Indium Gallium Arsenide. Tunnel injector layer (21) comprising Aluminum Arsenide for ballistically transporting electrons in transistor (10) is outwardly formed from base layer (20), and emitter layer (24) comprising Indium Aluminum Arsenide is outwardly formed from tunnel injector layer (21).
Public/Granted literature
- US4366549A Multiplier with index transforms modulo a prime or modulo a fermat prime and the fermat prime less one Public/Granted day:1982-12-28
Information query
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