发明授权
- 专利标题: Pattern formation material and pattern formation method
- 专利标题(中): 图案形成材料和图案形成方法
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申请号: US206177申请日: 1994-03-07
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公开(公告)号: US5443690A公开(公告)日: 1995-08-22
- 发明人: Satoshi Takechi , Makoto Takahashi , Yuko Kaimoto
- 申请人: Satoshi Takechi , Makoto Takahashi , Yuko Kaimoto
- 申请人地址: JPX Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX5-110471 19930512
- 主分类号: C09K3/00
- IPC分类号: C09K3/00 ; C23F1/00 ; G03F7/004 ; G03F7/039 ; H01L21/027 ; B44C1/22 ; B29C37/00
摘要:
A pattern formation material capable of keeping dimensional accuracy of a pattern at a desired level even after a polymer is left standing for a long time after exposure and before baking, and a method of forming such a pattern formation material, which comprises a copolymer containing units containing a polycyclic aromatic ring, a condensed ring having at least one aromatic ring, or an aromatic ring having, as a substitution group, an alicyclic group, a branched alkyl or a halogen, and units from a monomer containing a photosensitive group, and a compound generating an acid by irradiation to ultraviolet rays.
公开/授权文献
- US06046061A Method of inspecting wafer water mark 公开/授权日:2000-04-04
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