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    Radiation sensitive material and method for forming pattern
    2.
    发明授权
    Radiation sensitive material and method for forming pattern 失效
    辐射敏感材料及其形成方法

    公开(公告)号：US6004720A

    公开(公告)日：1999-12-21

    申请号：US999394

    申请日：1997-12-29

    申请人： Satoshi Takechi ,  Makoto Takahashi ,  Yuko Kaimoto

    发明人： Satoshi Takechi ,  Makoto Takahashi ,  Yuko Kaimoto

    IPC分类号： C08K5/375 ,  G03F7/004 ,  G03F7/039 ,  G03C1/492

    CPC分类号： C08K5/375 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

    摘要： A copolymer expressed by the following structural formula ##STR1## was obtained by loading adamantyl methacrylate monomer and t-butyl acrylate monomer by 1:1, then conducting polymerization, adding AIBN as a polymerization initiator, and then conducting precipitation purification with methanol. Then to the copolymer, triphenylsulfonium hexafluoroantimonate was added to prepare a cyclohexanone solution. This solution was applied to a wafer, and exposed to a KrF excimer stepper and developed. The threshold energy Eth was 50 mJ/cm.sup.2. A 0.45 .mu.m-wide L & S was formed at 130 mJ/cm.sup.2. The radiation sensitive material has good transparency and etching resistance, high sensitivity, and little peeling.

    摘要翻译： 通过将甲基丙烯酸金刚烷酯单体和丙烯酸叔丁酯单体以1:1的比例加载，然后进行聚合，加入AIBN作为聚合引发剂，然后用甲醇进行沉淀纯化，得到由以下结构式表示的共聚物。 然后向共聚物中加入三苯基锍六氟锑酸盐以制备环己酮溶液。 将该溶液施加到晶片上，暴露于KrF准分子步进机并显影。 阈值能量Eth为50mJ / cm 2。 以130mJ / cm 2形成0.45μm宽的L＆S。 辐射敏感材料具有良好的透明度和耐蚀刻性，灵敏度高，剥离少。

    Radiation sensitive material and method for forming pattern
    4.
    发明授权
    Radiation sensitive material and method for forming pattern 失效
    辐射敏感材料及其形成方法

    公开(公告)号：US07465529B2

    公开(公告)日：2008-12-16

    申请号：US11582426

    申请日：2006-10-18

    申请人： Satoshi Takechi ,  Makoto Takahashi ,  Yuko Kaimoto

    发明人： Satoshi Takechi ,  Makoto Takahashi ,  Yuko Kaimoto

    IPC分类号： G03F7/039 ,  G03F7/34

    CPC分类号： C08K5/375 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111 ,  C08L33/06

    摘要： A copolymer expressed by the following structural formula was obtained by loading adamantyl methacrylate monomer and t-butyl acrylate monomer by 1:1, then conducting polymerization, adding AIBN as a polymerization initiator, and then conducting precipitation purification with methanol. Then to the copolymer, triphenylsulfonium hexafluoroantimonate was added to prepare a cyclohexanone solution. This solution was applied to a wafer, and exposed to a KrF excimer stepper and developed. The threshold energy Eth was 50 mJ/cm2. A 0.45 μm-wide L & S was formed at 130 mJ/cm2. The radiation sensitive material has good transparency and etching resistance, high sensitivity, and little peeling.

    摘要翻译： 通过将甲基丙烯酸金刚烷酯单体和丙烯酸叔丁酯单体以1:1的比例加载，然后进行聚合，加入AIBN作为聚合引发剂，然后用甲醇进行沉淀纯化，得到由以下结构式表示的共聚物。 然后向共聚物中加入三苯基锍六氟锑酸盐以制备环己酮溶液。 将该溶液施加到晶片上，暴露于KrF准分子步进机并显影。 阈值能量Eth为50mJ / cm 2。 在130mJ / cm 2下形成0.45μm的L＆S。 辐射敏感材料具有良好的透明度和耐蚀刻性，灵敏度高，剥离少。

    Radiation sensitive material and method for forming pattern
    5.
    发明授权
    Radiation sensitive material and method for forming pattern 有权
    辐射敏感材料及其形成方法

    公开(公告)号：US07179580B2

    公开(公告)日：2007-02-20

    申请号：US10833114

    申请日：2004-04-28

    申请人： Satoshi Takechi ,  Makoto Takahashi ,  Yuko Kaimoto

    发明人： Satoshi Takechi ,  Makoto Takahashi ,  Yuko Kaimoto

    IPC分类号： G03F7/004 ,  G03C1/492

    CPC分类号： C08K5/375 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111 ,  C08L33/06

    摘要： A copolymer expressed by the following structural formula was obtained by loading adamantyl methacrylate monomer and t-butyl acrylate monomer by 1:1, then conducting polymerization, adding AIBN as a polymerization initiator, and then conducting precipitation purification with methanol. Then to the copolymer, triphenylsulfonium hexafluoroantimonate was added to prepare a cyclohexanone solution. This solution was applied to a wafer, and exposed to a KrF excimer stepper and developed. The threshold energy Eth was 50 mJ/cm2. A 0.45 μm-wide L & S was formed at 130 mJ/cm2. The radiation sensitive material has good transparency and etching resistance, high sensitivity, and little peeling.

    摘要翻译： 通过将甲基丙烯酸金刚烷酯单体和丙烯酸叔丁酯单体以1:1的比例加载，然后进行聚合，加入AIBN作为聚合引发剂，然后用甲醇进行沉淀纯化，得到由以下结构式表示的共聚物。 然后向共聚物中加入三苯基锍六氟锑酸盐以制备环己酮溶液。 将该溶液施加到晶片上，暴露于KrF准分子步进机并显影。 阈值能量Eth为50mJ / cm 2。 在130mJ / cm 2下形成0.45μm的L＆S。 辐射敏感材料具有良好的透明度和耐蚀刻性，灵敏度高，剥离少。

    Pattern formation material and pattern formation method
    7.
    发明授权
    Pattern formation material and pattern formation method 失效
    图案形成材料和图案形成方法

    公开(公告)号：US5443690A

    公开(公告)日：1995-08-22

    申请号：US206177

    申请日：1994-03-07

    申请人： Satoshi Takechi ,  Makoto Takahashi ,  Yuko Kaimoto

    发明人： Satoshi Takechi ,  Makoto Takahashi ,  Yuko Kaimoto

    IPC分类号： C09K3/00 ,  C23F1/00 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  B44C1/22 ,  B29C37/00

    CPC分类号： G03F7/039 ,  Y10S430/111

    摘要： A pattern formation material capable of keeping dimensional accuracy of a pattern at a desired level even after a polymer is left standing for a long time after exposure and before baking, and a method of forming such a pattern formation material, which comprises a copolymer containing units containing a polycyclic aromatic ring, a condensed ring having at least one aromatic ring, or an aromatic ring having, as a substitution group, an alicyclic group, a branched alkyl or a halogen, and units from a monomer containing a photosensitive group, and a compound generating an acid by irradiation to ultraviolet rays.

    摘要翻译： 即使在聚合物在曝光和烘烤之后长时间放置聚合物之后，也能够将图案的尺寸精度保持在期望水平的图案形成材料，以及形成这种图案形成材料的方法，该方法包括含有单元 含有多环芳香环，具有至少一个芳香环的稠环或具有脂环基，支链烷基或卤素取代基的芳香环，以及含有感光性基团的单体的单体，和 通过照射紫外线产生酸的化合物。