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US5445985A Method of forming integrated limiter and amplifying devices 失效
形成集成限幅器和放大装置的方法

Method of forming integrated limiter and amplifying devices
摘要:
Integrated circuit structure and processing is provided for a high power limiter including at least a first anti-parallel array of monolithically integrated Schottky diodes. In a further embodiment, integrated circuit structure and processing is provided for an MMIC, microwave and millimeter wave monolithic integrated circuit, including an amplifier and a high power limiter monolithically integrated on the same substrate.
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