发明授权
- 专利标题: Plasma processing apparatus
- 专利标题(中): 等离子体处理装置
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申请号: US98538申请日: 1993-07-28
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公开(公告)号: US5449410A公开(公告)日: 1995-09-12
- 发明人: Mei Chang , Cissy Leung
- 申请人: Mei Chang , Cissy Leung
- 申请人地址: CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: CA Santa Clara
- 主分类号: H05H1/46
- IPC分类号: H05H1/46 ; C23C16/02 ; C23C16/50 ; H01J37/32 ; H01L21/205 ; H01L21/302 ; H01L21/3065 ; H01L21/31 ; C23C16/00
摘要:
A plasma processing apparatus has a chamber with an open top and a cover plate extending across the open top of the chamber. The cover plate has an opening therethrough. An annular shield of an electrical insulating material is secured to the cover plate around the opening and extends partially across the opening. An aluminum showerhead is within the shield and has holes therethrough through which a gas can pass into the chamber. The showerhead is connected to a source of RF voltage to provide a flow of RF power between the showerhead and an electrode within the chamber. The shield has a plurality of openings therethrough which allows the RF power to flow through the openings from the showerhead to the electrode in the event that the showerhead becomes coated with particles of an insulating material.
公开/授权文献
- USD423778S Can-shaped tool box 公开/授权日:2000-05-02
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