发明授权
- 专利标题： Semiconductor device provided with isolation region
- 专利标题（中）： 具有隔离区域的半导体器件
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申请号： US208119申请日： 1994-03-09
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公开(公告)号： US5449946A公开(公告)日： 1995-09-12
- 发明人: Toshio Sakakibara , Makio Iida , Takayuki Sugisaka , Shoji Miura
- 申请人： Toshio Sakakibara , Makio Iida , Takayuki Sugisaka , Shoji Miura
- 申请人地址： JPX Kariya
- 专利权人： Nippondenso Co., Ltd.
- 当前专利权人： Nippondenso Co., Ltd.
- 当前专利权人地址： JPX Kariya
- 优先权： JPX5-049656 19930310
- 主分类号： H01L21/74
- IPC分类号： H01L21/74 ; H01L21/762 ; H01L21/763 ; H01L21/822 ; H01L27/04 ; H01L29/06 ; H01L27/02
摘要：
A semiconductor device is provided in which a contact is very simply formed on conductive material for capacitive coupling prevention. Two silicon substrates are bonded through a silicon oxide film. And a trench extending to the silicon oxide film is formed in one of silicon substrates so as to isolate between plural circuit elements from each other, and islands for circuit element formation are compartmently formed by the trench. A silicon oxide film is formed on an outer periphery portion of the islands for circuit element formation. Furthermore, an island for capacitive coupling prevention is formed by the silicon substrate between the islands for circuit element formation and is applied thereto to be maintained in an electric potential of constant.
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