发明授权
US5450812A Process for growing a film epitaxially upon an oxide surface and
structures formed with the process
失效
在氧化物表面和由该方法形成的结构物上外延生长薄膜的方法
- 专利标题: Process for growing a film epitaxially upon an oxide surface and structures formed with the process
- 专利标题(中): 在氧化物表面和由该方法形成的结构物上外延生长薄膜的方法
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申请号: US163427申请日: 1993-12-08
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公开(公告)号: US5450812A公开(公告)日: 1995-09-19
- 发明人: Rodney A. McKee , Frederick J. Walker
- 申请人: Rodney A. McKee , Frederick J. Walker
- 申请人地址: TN Oak Ridge
- 专利权人: Martin Marietta Energy Systems, Inc.
- 当前专利权人: Martin Marietta Energy Systems, Inc.
- 当前专利权人地址: TN Oak Ridge
- 主分类号: C30B23/08
- IPC分类号: C30B23/08 ; C30B23/02 ; C30B29/16 ; G02B6/13
摘要:
A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.
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