-
1.发明授权Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process 失效将外延碱土金属氧化物沉积到基底上的方法和用该方法制备的结构
公开(公告)号：US5482003A
公开(公告)日：1996-01-09
申请号：US88554
申请日：1993-07-06
摘要： A process and structure involving a silicon substrate utilize molecular beam epitaxy (MBE) and/or electron beam evaporation methods and an ultra-high vacuum facility to grow a layup of epitaxial alkaline earth oxide films upon the substrate surface. By selecting metal constituents for the oxides and in the appropriate proportions so that the lattice parameter of each oxide grown closely approximates that of the substrate or base layer upon which oxide is grown, lattice strain at the film/film or film/substrate interface of adjacent films is appreciably reduced or relieved. Moreover, by selecting constituents for the oxides so that the lattice parameters of the materials of adjacent oxide films either increase or decrease in size from one parameter to another parameter, a graded layup of films can be grown (with reduced strain levels therebetween) so that the outer film has a lattice parameter which closely approximates that of, and thus accomodates the epitaxial growth of, a pervoskite chosen to be grown upon the outer film.
摘要翻译： 涉及硅衬底的工艺和结构利用分子束外延（MBE）和/或电子束蒸发方法和超高真空设备，以在衬底表面上生长外延碱土金属氧化物膜的叠层。 通过选择氧化物和适当比例的金属成分，使得生长的每种氧化物的晶格参数与生长氧化物的衬底或基底层的晶格参数接近，在相邻的膜/膜或膜/衬底界面处的晶格应变 电影明显减轻或减轻。 此外，通过选择氧化物的成分，使得相邻氧化物膜的材料的晶格参数从一个参数到另一个参数的尺寸增加或减小，可以生长膜的分级叠层（其间具有降低的应变水平），使得 外部膜具有接近于被选择生长在外部膜上的渗透质的外延生长的晶格参数，并且因此适应外延生长。
-
公开(公告)号：US6103008A
公开(公告)日：2000-08-15
申请号：US126129
申请日：1998-07-30
CPC分类号： H01L29/516 , G02F1/03 , H01L21/28291 , H01L21/31691 , G02B2006/12142 , G02B2006/12159
摘要： A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.
摘要翻译： 适用于许多电光应用中的任何一种电光学应用的结晶薄膜结构，例如相位调制器或干涉仪的组件，包括硅的半导体衬底和钙电石的铁电光学透明薄膜 覆盖硅衬底表面的BaTiO3。 BaTiO3薄膜的特征在于，与铁电体膜相关联的基本上所有的偶极矩基本上平行于衬底的表面布置，以提高膜的电光质量。
-
3.发明授权Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process 失效将氧化物外延沉积到硅衬底上的方法和用该方法制备的结构
公开(公告)号：US5225031A
公开(公告)日：1993-07-06
申请号：US683401
申请日：1991-04-10
IPC分类号： C30B23/02
摘要： A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.
摘要翻译： 包括硅衬底的工艺和结构利用超高真空和分子束外延（MBE）方法在衬底的表面上生长外延氧化膜。 当膜生长时，在硅界面处形成的化合物的晶格变得稳定，并且由具有氯化钠型晶格结构的氧化物构成的基底层在化合物上外延生长以覆盖基底表面。 然后可以在基底层上外延生长钙钛矿，以产生具有电子功能的具有本身具有技术上重要性质的钙钛矿的硅的产品。
-
4.发明授权Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface 失效用于控制晶体氧化物半导体界面上的带偏移和取向的结构和方法公开(公告)号：US06652989B2
公开(公告)日：2003-11-25
申请号：US09910322
申请日：2001-07-20
IPC分类号： B32B900
CPC分类号： H01L29/4983 , C30B23/002 , C30B23/02 , C30B25/02 , C30B29/16 , C30B29/32 , H01L21/28291 , Y10T428/12528 , Y10T428/12611 , Y10T428/12618
摘要： A crystalline oxide-on-semiconductor structure and a process for constructing the structure involves a substrate of silicon, germanium or a silicon-germanium alloy and an epitaxial thin film overlying the surface of the substrate wherein the thin film consists of a first epitaxial stratum of single atomic plane layers of an alkaline earth oxide designated generally as (AO)n and a second stratum of single unit cell layers of an oxide material designated as (A′BO3)m so that the multilayer film arranged upon the substrate surface is designated (AO)n(A′BO3)m wherein n is an integer repeat of single atomic plane layers of the alkaline earth oxide AO and m is an integer repeat of single unit cell layers of the A′BO3 oxide material. Within the multilayer film, the values of n and m have been selected to provide the structure with a desired electrical structure at the substrate/thin film interface that can be optimized to control band offset and alignment.
摘要翻译： 晶体氧化物半导体结构和用于构造该结构的工艺涉及硅，锗或硅 - 锗合金的衬底和覆盖衬底表面的外延薄膜，其中薄膜由第一外延层 通常以（AO）n表示的碱土金属氧化物的单原子平面层和被称为（A'BO3）m的氧化物材料的单个单元电池层的第二层，以便指定布置在基板表面上的多层膜 AO）n（A'BO3）m其中n是碱土金属氧化物AO的单原子面层的整数重复，m是A'BO 3氧化物材料的单个单元电池层的整数重复。 在多层膜内，已经选择了n和m的值，以在衬底/薄膜界面处提供具有所需电结构的结构，该结构可被优化以控制带偏移和对准。
-
5.发明授权Control system for use when growing thin-films on semiconductor-based materials 失效在半导体材料上生长薄膜时使用的控制系统公开(公告)号：US06511544B2
公开(公告)日：2003-01-28
申请号：US09918048
申请日：2001-07-30
IPC分类号： C23C1400
摘要： A process and system for use during the growth of a thin film upon the surface of a substrate by exposing the substrate surface ti vaporized material in a high vacuum (HV) facility involves the directing of an electron beam generally toward the surface of the substrate as the substrate is exposed to vaporized material so that electrons are diffracted from the substrate surface by the beam and the monitoring of the pattern of electrons diffracted from the substrate surfaces as vaporized material settles upon the substrate surface. When the monitored pattern achieves a condition indicative of the desired condition of the thin film being grown upon the substrate, the exposure of the substrate to the vaporized materials is shut off of otherwise adjusted. To facilitate the adjustment of the crystallographic orientation of the film relative to the electron beam, the system includes a mechanism for altering the orientation of the surface of the substrate relative to the electron beam.
摘要翻译： 通过使基板表面暴露于高真空（HV）设备中的蒸发材料，在薄膜生长期间用于薄膜生长的过程和系统包括将电子束大致朝向衬底的表面引导为 衬底被暴露于汽化材料，使得电子由衬底表面衍射，并且当蒸发的材料沉积在衬底表面上时，监测从衬底表面衍射的电子图案。 当监测图案达到指示薄膜在基板上生长的期望条件的条件时，基板对气化材料的曝光被切断以另外调整。 为了便于调整膜相对于电子束的晶体取向，该系统包括用于改变基板表面相对于电子束的取向的机构。
-
6.发明授权Control method and system for use when growing thin-films on semiconductor-based materials 失效在半导体材料上生长薄膜时使用的控制方法和系统公开(公告)号：US06306668B1
公开(公告)日：2001-10-23
申请号：US09404512
申请日：1999-09-23
IPC分类号： H01L2120
摘要： A process and system for use during the growth of a thin film upon the surface of a substrate by exposing the substrate surface to vaporized material in a high vacuum (HV) facility involves the directing of an electron beam generally toward the surface of the substrate as the substrate is exposed to vaporized material so that electrons are diffracted from the substrate surface by the beam and the monitoring of the pattern of electrons diffracted from the substrate surface as vaporized material settles upon the substrate surface. When the monitored pattern achieves a condition indicative of the desired condition of the thin film being grown upon the substrate, the exposure of the substrate to the vaporized materials is shut off or otherwise adjusted. To facilitate the adjustment of the crystallographic orientation of the film relative to the electron beam, the system includes a mechanism for altering the orientation of the surface of the substrate relative to the electron beam.
摘要翻译： 通过在高真空（HV）设备中将基板表面暴露于汽化材料，在薄膜生长期间用于薄膜生长的工艺和系统包括将电子束大致朝向基板的表面引导为 衬底暴露于气化材料，使得电子通过光束从衬底表面衍射，并且当气化材料沉积在衬底表面上时，监测从衬底表面衍射的电子图案。 当所监测的图案达到指示在基板上生长薄膜的期望条件的条件时，基板对气化材料的曝光被切断或调整。 为了便于调整膜相对于电子束的晶体取向，该系统包括用于改变基板表面相对于电子束的取向的机构。
-
7.发明授权Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate and a crystalline oxide-on-semiconductor structure 失效在IV族半导体衬底和半导体结晶氧化物结构上制备结晶氧化物的通用方法公开(公告)号：US06287710B1
公开(公告)日：2001-09-11
申请号：US09650340
申请日：2000-08-28
IPC分类号： H01L2912
CPC分类号： H01L29/4983 , C30B23/002 , C30B23/02 , C30B25/02 , C30B29/16 , C30B29/32 , H01L21/28291 , Y10T428/12528 , Y10T428/12611 , Y10T428/12618
摘要： A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO)n(A′BO3)m in which “n” and “m” are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.
摘要翻译： 描述了在IV族半导体的表面上外延生长结晶氧化物的方法以及通过该方法构造的结构。 半导体可以是锗或硅，并且结晶氧化物通常可以由式（AO）n（A'BO 3）m表示，其中“n”和“m”是碱土的平面的非负整数重复 氧化物或含碱土金属的钙钛矿氧化物。 通过在多组分半导体/氧化物体系中界面热力学的原子水平控制，可以获得半导体和结晶氧化物之间的高度完美的界面。
-
8.发明授权Process for growing a film epitaxially upon an oxide surface and structures formed with the process 失效在氧化物表面和由该方法形成的结构物上外延生长薄膜的方法
公开(公告)号：US5450812A
公开(公告)日：1995-09-19
申请号：US163427
申请日：1993-12-08
摘要： A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.
摘要翻译： 其中由钙钛矿或尖晶石构成的膜在表面上，例如碱土金属氧化物表面外延地构成，涉及钙钛矿或尖晶石的交替组成金属氧化物平面的外延生长。 构建在表面上的第一层金属氧化物包括在钙钛矿或尖晶石的晶体结构中提供小阳离子的金属元素，并且在表面上构建的第二层金属氧化物包括提供大阳离子的金属元素 钙钛矿或尖晶石的晶体结构。 涉及薄膜堆积的层叠顺序减少了否则由第一原子层的界面静电导致的问题，并且这些氧化物可被稳定为单位单元厚度的相当薄膜或以高结晶质量生长至厚度为0.5 -0.7微米用于光学设备应用。
-
9.发明授权Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate 失效在IV族半导体衬底上制备结晶氧化物的通用方法
公开(公告)号：US6143072A
公开(公告)日：2000-11-07
申请号：US286798
申请日：1999-04-06
CPC分类号： H01L29/4983 , C30B23/002 , C30B23/02 , C30B25/02 , C30B29/16 , C30B29/32 , H01L21/28291 , Y10T428/12528 , Y10T428/12611 , Y10T428/12618
摘要： A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.
摘要翻译： 描述了在IV族半导体的表面上外延生长结晶氧化物的方法以及通过该方法构造的结构。 半导体可以是锗或硅，并且结晶氧化物通常可以由式（AO）n（A'BO 3）m表示，其中“n”和“m”是碱土的平面的非负整数重复 氧化物或含碱土金属的钙钛矿氧化物。 通过在多组分半导体/氧化物体系中界面热力学的原子水平控制，可以获得半导体和结晶氧化物之间的高度完美的界面。
-
10.发明授权
公开(公告)号：US6080235A
公开(公告)日：2000-06-27
申请号：US868076
申请日：1997-06-03
IPC分类号： C30B33/04
CPC分类号： C30B33/04
摘要： A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.
摘要翻译： 单片晶体结构及其制造方法涉及硅等半导体基板，覆盖在基板表面上的铁电体膜，例如BaTiO 3，其中铁电薄膜的原子层直接覆盖在基板的表面上。 通过控制铁电薄膜的几何形状，无论是在薄膜堆积过程中，还是通过对邻近其边界的薄膜进行适当的处理，铁电薄膜内的平面内拉伸应变就可以达到允许的程度 该铁电体膜被平面外的极化，从而实现底层衬底材料的极化的面内切换。 本发明的方法包括以下步骤：通过例如从已经构建在基板上的铁电体膜去除材料来构造在半导体衬底顶部的铁电体膜的边界处的机械约束的不连续性 在台状几何形状的基板上形成铁电薄膜，或者通过离子束沉积技术在边界处引起不连续性。
-
-
-
-
-
-
-
-
-
搜索结果
10 条记录 (耗时 0.018 秒)
