发明授权
- 专利标题： Charge transfer device having a high-resistance electrode and a low-resistance electrode
- 专利标题（中）： 具有高电阻电极和低电阻电极的电荷转移装置
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申请号： US145347申请日： 1993-10-29
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公开(公告)号： US5451802A公开(公告)日： 1995-09-19
- 发明人: Hiroyoshi Komobuchi , Takao Kuroda
- 申请人： Hiroyoshi Komobuchi , Takao Kuroda
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX4-291071 19921029
- 主分类号： H01L29/762
- IPC分类号： H01L29/762 ; H01L21/339 ; H01L29/423 ; H04N5/335 ; H04N5/341 ; H04N5/369 ; H04N5/372 ; H01L29/78
摘要：
A charge transfer device is provided, which includes: a semiconductor substrate having transfer regions for transferring a signal charge; an insulating film formed on the semiconductor substrate; an electrode layer formed above the transfer regions with the insulating film sandwiched therebetween, the electrode layer having high-resistant portions and low-resistant portions alternately provided; and voltage application means for applying a voltage for changing a surface potential of the transfer regions to the low-resistant portions of the electrode layer.