发明授权
US5453632A Advanced lateral overflow drain antiblooming structure for virtual gate
photosites
失效
用于虚拟栅极光电子的先进的侧向溢流排水防护结构
- 专利标题： Advanced lateral overflow drain antiblooming structure for virtual gate photosites
- 专利标题（中）： 用于虚拟栅极光电子的先进的侧向溢流排水防护结构
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申请号： US220087申请日： 1994-03-30
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公开(公告)号： US5453632A公开(公告)日： 1995-09-26
- 发明人: Jaroslav Hynecek , Hiroaki Shibuya , Hirofumi Komori
- 申请人： Jaroslav Hynecek , Hiroaki Shibuya , Hirofumi Komori
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： H01L27/148
- IPC分类号： H01L27/148 ; H01L29/78
摘要：
The lateral overflow drain for virtual phase devices includes: a semiconductor region 72 of a first conductivity type; a drain region 24 of the first conductivity type formed in the semiconductor region 72; a threshold adjust region 22 formed in the semiconductor region 72 and surrounding the drain region 24; an electrode 20 overlying and connected to the drain region 24, the electrode 20 overlying and separated from at least a portion of the threshold adjust region 22; and virtual gates 30 and 32 of the second conductivity type in the semiconductor region 72 spaced apart from the drain region 24 and partially surrounding the drain region 24.
公开/授权文献
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