发明授权
- 专利标题： Semiconductor device with bumps
- 专利标题（中）： 具有凸块的半导体器件
-
申请号： US358979申请日： 1994-12-19
-
公开(公告)号： US5461261A公开(公告)日： 1995-10-24
- 发明人: Masanori Nishiguchi
- 申请人： Masanori Nishiguchi
- 申请人地址： JPX
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： JPX
- 优先权： JPX4-113570 19920506
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L23/485 ; H01L23/48 ; H01L29/46 ; H01L29/62 ; H01L29/64
摘要：
The semiconductor chip is provided with bumps each formed by alternately building up two types of metal materials capable of forming an eutectic alloy, and, therefore, an eutectic alloy reaction takes place at each boundary surface between two layers. The entire bump fully melts in the reaction so that the semiconductor chip may be securely connected on the substrate.
信息查询
IPC分类:
