发明授权
- 专利标题: Semiconductor memory
- 专利标题(中): 半导体存储器
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申请号: US365104申请日: 1994-12-28
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公开(公告)号: US5463577A公开(公告)日: 1995-10-31
- 发明人: Yukihito Oowaki , Takehiro Hasegawa
- 申请人: Yukihito Oowaki , Takehiro Hasegawa
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX5-336667 19931228; JPX6-285279 19941118
- 主分类号: G11C11/41
- IPC分类号: G11C11/41 ; G11C8/12 ; G11C8/14 ; G11C11/22 ; G11C11/401 ; G11C11/404 ; G11C11/407 ; G11C11/24
摘要:
There is provided a semiconductor memory having a reduced power consumption in data access and a high access speed in a NAND cell array scheme in which a memory cell unit is constituted by cascade-connecting a plurality of memory cells with each other. A memory cell array is divided into a plurality of sub-arrays, and the divided sub-arrays are selectively activated, thereby decreasing the capacitances of the word lines, register word lines, bit lines, and the like which are charged/discharged in data access.
公开/授权文献
- US4441677A Clamp device 公开/授权日:1984-04-10
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