发明授权
- 专利标题: Method of forming an integrated circuit waveguide
- 专利标题(中): 形成集成电路波导的方法
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申请号: US270051申请日: 1994-07-01
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公开(公告)号: US5465860A公开(公告)日: 1995-11-14
- 发明人: Harry H. Fujimoto , Siddhartha Das
- 申请人: Harry H. Fujimoto , Siddhartha Das
- 申请人地址: CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: CA Santa Clara
- 主分类号: G02B6/12
- IPC分类号: G02B6/12 ; G02B6/122 ; G02F1/065 ; C23F1/02
摘要:
Manufacturing techniques for forming waveguide channels and devices. A trench is formed in a cladding layer through an opening in a conductive layer. The trench is then filled with an active waveguide polymer and the conductive layer is patterned such that the active waveguide polymer may be poled. Also, a trench may be isotropically etched through a cladding layer to an underlying etch stop layer. The etch stop layer is thereafter removed from within the trench region to expose a previously formed, smooth, underlying cladding layer. Finally, a waveguide formed in a cladding layer, bounded in width by an overlying barrier layer, underlies a masking layer having a gap formed therein. Within the gap, a portion of the waveguide channel along with juxtaposing sections of the barrier layer are exposed. An etch is thereafter performed to remove the portion of the waveguide polymer in the waveguide channel bounded by both the masking layer and the barrier layer. Then an alternate type of waveguide polymer is formed in the void left behind by the etched waveguide polymer in the waveguide channel. Thus, a single waveguide channel having a plurality of waveguide polymers is formed.
公开/授权文献
- US6147544A Data transfer circuit transferring complementary data signals 公开/授权日:2000-11-14
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