发明授权
US5467305A Three-dimensional direct-write EEPROM arrays and fabrication methods
失效
三维直写EEPROM阵列及制作方法
- 专利标题: Three-dimensional direct-write EEPROM arrays and fabrication methods
- 专利标题(中): 三维直写EEPROM阵列及制作方法
-
申请号: US850734申请日: 1992-03-12
-
公开(公告)号: US5467305A公开(公告)日: 1995-11-14
- 发明人: Claude L. Bertin , Donelli J. DiMaria , Makoto Miyakawa , Yoshinori Sakaue
- 申请人: Claude L. Bertin , Donelli J. DiMaria , Makoto Miyakawa , Yoshinori Sakaue
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: NY Armonk
- 主分类号: H01L21/8247
- IPC分类号: H01L21/8247 ; H01L27/115 ; H01L29/788 ; H01L29/792 ; G11C14/00
摘要:
A three-dimensional memory cell, suitable for electrically erasable programmable read only memories (EEPROMS), which has direct-write cell capability is disclosed. The memory cell is utilized in the fabrication of non-volatile, direct-write EEPROM arrays with high integration density. A typical EEPROM array includes a plurality of elongated shallow trenches formed in a semiconductor substrate. Multiple direct-write EEPROM cells are disposed within each elongated trench such that each EEPROM cell shares a recall gate and a program gate with another cell in the same trench. Preferably, a silicon rich dielectric (such as silicon rich oxide) disposed between each floating gate and its associated programming and recall gates. Both common source diffusion and isolated source diffusion embodiments are disclosed. Further, various fabrication methods for the direct-write EEPROM arrays presented are described.
公开/授权文献
- US4104815A Steam iron 公开/授权日:1978-08-08