发明授权
- 专利标题: Method of making a VCSEL
- 专利标题(中): 制造VCSEL的方法
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申请号: US346558申请日: 1994-11-29
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公开(公告)号: US5468656A公开(公告)日: 1995-11-21
- 发明人: Chan-Long Shieh , Michael S. Lebby , John Lungo
- 申请人: Chan-Long Shieh , Michael S. Lebby , John Lungo
- 申请人地址: IL Schaumburg
- 专利权人: Motorola
- 当前专利权人: Motorola
- 当前专利权人地址: IL Schaumburg
- 主分类号: H01S5/00
- IPC分类号: H01S5/00 ; H01S5/042 ; H01S5/183 ; H01S5/20 ; H01L21/265
摘要:
A substrate with a surface, the surface having disposed thereon a first stack of distributed Bragg reflectors, an active area, a second stack of distributed Bragg reflectors, a contact region, and a dielectric layer is provided. A first isolation trench is formed that extends through the dielectric layer, the contact region, and into a portion of the second stack of distributed Bragg reflectors. A dielectric layer is disposed on the substrate. A second isolation trench is formed through the nitride layer, the contact region, the second stack of distributed Bragg reflectors, the active region and a portion of the first stack of distributed Bragg reflectors, wherein the second isolation trench encircles the first isolation trench. A first electrical contact is formed on the second stack of distributed Bragg reflectors and a second electrical contact is formed on the contact region.
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