发明授权
US5470799A Method for pretreating semiconductor substrate by photochemically
removing native oxide
失效
通过光化学去除天然氧化物来预处理半导体衬底的方法
- 专利标题： Method for pretreating semiconductor substrate by photochemically removing native oxide
- 专利标题（中）： 通过光化学去除天然氧化物来预处理半导体衬底的方法
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申请号： US342045申请日： 1989-04-24
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公开(公告)号： US5470799A公开(公告)日： 1995-11-28
- 发明人: Hiromi Itoh , Masanobu Iwasaki , Akira Tokui , Katsuhiro Tsukamoto
- 申请人： Hiromi Itoh , Masanobu Iwasaki , Akira Tokui , Katsuhiro Tsukamoto
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX63-108106 19880428; JPX63-267391 19881024
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/306 ; H01L21/3065 ; H01L21/31 ; H01L21/00 ; H01L21/02 ; H01L21/463
摘要：
The present invention provides a method for removing a natural gas film or contaminant adhering on a surface of a silicon semiconductor substrate. The semiconductor substrate having the natural oxide film or contaminant adhered thereon is placed in a chamber. Then, a HCl gas is introduced into the chamber. The semiconductor substrate is heated at a temperature in the range of 200.degree..about.700.degree. C., while ultraviolet rays are irradiated into the chamber. According to the method, the reaction of the natural oxide with HCl gas is promoted by a synergistic effect of light and heat energy. Therefore, the natural oxide film or contaminant can be removed at a lower temperature with the help of the light energy.
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