公开(公告)号：US06602725B2

公开(公告)日：2003-08-05

申请号：US09962199

申请日：2001-09-26

申请人： Yuichi Sakai ,  Hiroyuki Chibahara ,  Masanobu Iwasaki ,  Kakutaro Suda

发明人： Yuichi Sakai ,  Hiroyuki Chibahara ,  Masanobu Iwasaki ,  Kakutaro Suda

IPC分类号： H01L2166

CPC分类号： H01L21/31053 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device includes a semiconductor wafer which is partitioned into chip regions by scribe line area. A device pattern is formed in the device forming region included in the chip region. A monitor pattern is formed from the same material as that of the device patterns in the chip region simultaneously with the device pattern. An interlayer insulating film is formed in the chip region so as to cover the device pattern and the monitor pattern. The monitor pattern is used to measure the thickness of the interlayer insulating film.

公开(公告)号：US06211070B1

公开(公告)日：2001-04-03

申请号：US09329494

申请日：1999-06-10

申请人： Masanobu Iwasaki ,  Katsuhiro Tsukamoto

发明人： Masanobu Iwasaki ,  Katsuhiro Tsukamoto

IPC分类号： H01L214763

CPC分类号： H01L21/78 ,  H01L21/743

摘要： On a surface of a semiconductor substrate within a device forming region, a MOS transistor including a gate electrode, gate oxide film and source•drain is formed. An insulating layer is formed on the surface of the semiconductor substrate. In an opening of the insulating layer above the source•drain, a tungsten plug is formed. At a dicing line portion, the insulating layer has a trench portion. The trench portion is formed to surround the device forming region. A tungsten street having a top surface continuous to the top surface of the insulating layer is formed in the trench. By this semiconductor device, short-circuit between bonding pads and the like can be prevented, and the reliability can be improved.

摘要翻译： 在器件形成区域内的半导体衬底的表面上形成包括栅电极，栅极氧化膜和源极的MOS晶体管。 绝缘层形成在半导体衬底的表面上。 在源极上方的绝缘层的开口中，形成钨插塞。 在切割线部分，绝缘层具有沟槽部分。 沟槽部形成为围绕器件形成区域。 在沟槽中形成具有与绝缘层的顶表面连续的顶表面的钨街。 通过该半导体装置，能够防止接合焊盘之间的短路等，能够提高可靠性。

公开(公告)号：US5429991A

公开(公告)日：1995-07-04

申请号：US74516

申请日：1993-06-11

申请人： Masanobu Iwasaki ,  Hiromi Itoh

发明人： Masanobu Iwasaki ,  Hiromi Itoh

IPC分类号： C23C16/02 ,  C23C16/08 ,  C23C16/54 ,  H01L21/285 ,  H01L21/3205

CPC分类号： C23C16/0272 ,  C23C16/08 ,  C23C16/54 ,  H01L21/28556 ,  H01L21/32051

摘要： A method of forming a thin film for a semiconductor device, for forming a metal thin film by chemical vapor deposition on an intermediate layer which is provided on a substrate, comprises the steps of activating the surface of the intermediate layer by introducing a halide gas of a metal for forming the thin film onto the surface of the intermediate layer, forming nuclei on the surface of the intermediate layer by introducing a silane-system gas onto the activated surface of the intermediate layer, and introducing the halide gas and a reducing gas onto the surface of the intermediate layer formed with the nuclei, thereby depositing the metal thin film on the surface of the intermediate layer.

摘要翻译： 一种形成用于半导体器件的薄膜的方法，用于通过化学气相沉积在设置在基板上的中间层上形成金属薄膜包括以下步骤：通过引入中间层的表面来引入卤化物气体 用于在中间层的表面上形成薄膜的金属，通过将硅烷系气体引入到中间层的活化表面上，在中间层的表面上形成核，并将卤化物气体和还原气体引入到 中间层的表面形成有核，从而将金属薄膜沉积在中间层的表面上。

公开(公告)号：US07465216B2

公开(公告)日：2008-12-16

申请号：US11878028

申请日：2007-07-20

申请人： Masanobu Iwasaki ,  Yoshio Hayashide

发明人： Masanobu Iwasaki ,  Yoshio Hayashide

IPC分类号： B24B51/00 ,  B24B1/00 ,  B24B57/00

CPC分类号： B24B37/04 ,  B24B57/02 ,  B24C11/005

摘要： A first supply unit sprays and supplies abrasive slurry containing abrasive grains into a mixing unit. A second supply unit sprays and supplies additive into the mixing unit. A third supply unit sprays and supplies pure water into the mixing unit. The mixing unit mixes the mist of abrasive slurry, the mist of additive and the mist of pure water to prepare polishing solution, and supplies the polishing solution onto the major surface of a polishing stage.

摘要翻译： 第一供应单元将含有磨粒的研磨浆料喷射并供应到混合单元中。 第二供应单元喷雾并将混合单元中的添加剂供应。 第三供应单元喷雾并将纯水供应到混合单元中。 混合单元混合研磨浆料雾，添加剂雾和纯水雾以制备抛光溶液，并将抛光溶液供应到抛光台的主表面上。

公开(公告)号：US06727170B2

公开(公告)日：2004-04-27

申请号：US09903760

申请日：2001-07-13

申请人： Yoshifumi Takata ,  Yuichi Sakai ,  Hiroyuki Chibahara ,  Masanobu Iwasaki

发明人： Yoshifumi Takata ,  Yuichi Sakai ,  Hiroyuki Chibahara ,  Masanobu Iwasaki

IPC分类号： H01L2100

CPC分类号： H01L23/5226 ,  H01L21/76819 ,  H01L21/76838 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is described a semiconductor device which prevents a short circuit between a wiring layer formed in interlayer insulating films and vertical conductor plugs formed in the vicinity of the wiring layer, and a method of manufacturing the semiconductor device. The semiconductor device includes a first interlayer insulating film smoothly formed on a semiconductor substrate, conductor plugs which are formed by filling openings formed in the first interlayer insulating film so as to be level with the surface of the first interlayer insulating film, a second interlayer insulating film formed on the surface of the first interlayer insulating film and of the conductor plugs, a wiring pattern formed on the second interlayer insulating film, a third interlayer insulating film formed on the surface of the second interlayer insulating film so as to cover the wiring pattern, and an interconnect conductor formed so as to be electrically connected to the conductor plugs by filling the openings penetrating the second and third interlayer insulating films.

摘要翻译： 描述了防止在层间绝缘膜中形成的布线层和形成在布线层附近的垂直导体插塞之间的短路的半导体器件，以及半导体器件的制造方法。 半导体器件包括在半导体衬底上平滑地形成的第一层间绝缘膜，通过填充形成在第一层间绝缘膜中的开口以与第一层间绝缘膜的表面平齐而形成的导体插塞，第二层间绝缘 形成在第一层间绝缘膜和导体插塞的表面上的膜，形成在第二层间绝缘膜上的布线图案，形成在第二层间绝缘膜的表面上以覆盖布线图案的第三层间绝缘膜 以及互连导体，其通过填充贯穿第二和第三层间绝缘膜的开口而形成为与导体插塞电连接。

公开(公告)号：US06568996B2

公开(公告)日：2003-05-27

申请号：US09837323

申请日：2001-04-19

申请人： Toshio Kobayashi ,  Toshiyuki Toyoshima ,  Suguru Nagae ,  Masanobu Iwasaki ,  Kouichirou Tsutahara ,  Shin Hasegawa

发明人： Toshio Kobayashi ,  Toshiyuki Toyoshima ,  Suguru Nagae ,  Masanobu Iwasaki ,  Kouichirou Tsutahara ,  Shin Hasegawa

IPC分类号： C09K314

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： The object of the present invention is to provide a polishing agent for processing semiconductor, which can control coagulation and sedimentation and has stable and re-productive polishing properties under a proper dispersing condition to prevent generation of polishing flaw. The polishing agent for processing semiconductor comprises a compound having glucose structure, polishing particles and water.

公开(公告)号：US5470799A

公开(公告)日：1995-11-28

申请号：US342045

申请日：1989-04-24

申请人： Hiromi Itoh ,  Masanobu Iwasaki ,  Akira Tokui ,  Katsuhiro Tsukamoto

发明人： Hiromi Itoh ,  Masanobu Iwasaki ,  Akira Tokui ,  Katsuhiro Tsukamoto

IPC分类号： H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/00 ,  H01L21/02 ,  H01L21/463

CPC分类号： H01L21/02046 ,  Y10S438/906 ,  Y10S438/974

摘要： The present invention provides a method for removing a natural gas film or contaminant adhering on a surface of a silicon semiconductor substrate. The semiconductor substrate having the natural oxide film or contaminant adhered thereon is placed in a chamber. Then, a HCl gas is introduced into the chamber. The semiconductor substrate is heated at a temperature in the range of 200.degree..about.700.degree. C., while ultraviolet rays are irradiated into the chamber. According to the method, the reaction of the natural oxide with HCl gas is promoted by a synergistic effect of light and heat energy. Therefore, the natural oxide film or contaminant can be removed at a lower temperature with the help of the light energy.

摘要翻译： 本发明提供一种去除附着在硅半导体衬底的表面上的天然气膜或污染物的方法。 将具有附着在其上的天然氧化物膜或污染物的半导体衬底放置在室中。 然后，将HCl气体引入室中。 将半导体衬底在200℃至700℃的温度范围内加热，同时将紫外线照射到腔室中。 根据该方法，通过光和热能的协同效应促进天然氧化物与HCl气体的反应。 因此，借助光能可以在较低的温度下去除天然氧化物膜或污染物。

公开(公告)号：US5174881A

公开(公告)日：1992-12-29

申请号：US724488

申请日：1991-06-28

申请人： Masanobu Iwasaki ,  Hiromi Itoh ,  Akira Tokui ,  Katsuyoshi Mitsui ,  Katsuhiro Tsukamoto

发明人： Masanobu Iwasaki ,  Hiromi Itoh ,  Akira Tokui ,  Katsuyoshi Mitsui ,  Katsuhiro Tsukamoto

IPC分类号： C23C14/02 ,  C23C14/56 ,  C23C16/02 ,  C23C16/54

CPC分类号： C23C16/54 ,  C23C14/022 ,  C23C14/568 ,  C23C16/0236

摘要： A method of and an apparatus for removing a naturally grown oxide film and contaminants on the surface of a semiconductor substrate and then forming a thin film on the cleaned surface. The semiconductor substrate is placed in a pretreatment chamber and then hydrogen chloride gas is introduced into the chamber. Then, the semiconductor substrate is heated at a temperature between 200.degree..about.700.degree. C. and the surface of the semiconductor substrate is irradiated with ultraviolet rays, whereby the naturally grown oxide film and other contaminants on the semiconductor substrate can be removed. Then, a thin film is formed on the cleaned surface of the semiconductor substrate by a CVD method or a sputter method. According to this method, the naturally oxide film and other contaminants can be removed from the surface of the semiconductor substrate at a low temperature and the thin film can be formed on the cleaned surface. As a result, an interface structure between the semiconductor substrate and the thin film can be controlled to be in a preferable state.

摘要翻译： 一种用于去除半导体衬底表面上的天然生长的氧化物膜和污染物，然后在清洁表面上形成薄膜的方法和设备。 将半导体基板放置在预处理室中，然后将氯化氢气体引入室中。 然后，在200℃〜700℃的温度下加热半导体衬底，用紫外线照射半导体衬底的表面，由此可以除去半导体衬底上的天然生长的氧化膜和其它污染物。 然后，通过CVD法或溅射法在半导体衬底的清洁表面上形成薄膜。 根据该方法，可以在低温下从半导体基板的表面去除天然氧化膜和其它污染物，并且可以在清洁的表面上形成薄膜。 结果，可以将半导体衬底和薄膜之间的界面结构控制在优选的状态。

公开(公告)号：US5945716A

公开(公告)日：1999-08-31

申请号：US971041

申请日：1992-11-03

申请人： Masanobu Iwasaki ,  Katsuhiro Tsukamoto

发明人： Masanobu Iwasaki ,  Katsuhiro Tsukamoto

IPC分类号： H01L21/301 ,  H01L21/3205 ,  H01L21/74 ,  H01L21/78 ,  H01L23/52 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L21/78 ,  H01L21/743

摘要： On a surface of a semiconductor substrate within a device forming region, a MOS transistor including a gate electrode, gate oxide film and source.cndot.drain is formed. An insulating layer is formed on the surface of the semiconductor substrate. In an opening of the insulating layer above the source.cndot.drain, a tungsten plug is formed. At a dicing line portion, the insulating layer has a trench portion. The trench portion is formed to surround the device forming region. A tungsten street having a top surface continuous to the top surface of the insulating layer is formed in the trench. By this semiconductor device, short-circuit between bonding pads and the like can be prevented, and the reliability can be improved.

摘要翻译： 在器件形成区域内的半导体衬底的表面上，形成包括栅电极，栅极氧化膜和源极的MOS晶体管。 绝缘层形成在半导体衬底的表面上。 在源极上方的绝缘层的开口中，形成钨插塞。 在切割线部分，绝缘层具有沟槽部分。 沟槽部形成为围绕器件形成区域。 在沟槽中形成具有与绝缘层的顶表面连续的顶表面的钨街。 通过该半导体装置，能够防止接合焊盘之间的短路等，能够提高可靠性。

公开(公告)号：US20070270086A1

公开(公告)日：2007-11-22

申请号：US11878030

申请日：2007-07-20

申请人： Masanobu Iwasaki ,  Yoshio Hayashide

发明人： Masanobu Iwasaki ,  Yoshio Hayashide

IPC分类号： B24C1/08

CPC分类号： B24B37/04 ,  B24B57/02 ,  B24C11/005

摘要： A first supply unit sprays and supplies abrasive slurry containing abrasive grains into a mixing unit. A second supply unit sprays and supplies additive into the mixing unit. A third supply unit sprays and supplies pure water into the mixing unit. The mixing unit mixes the mist of abrasive slurry, the mist of additive and the mist of pure water to prepare polishing solution, and supplies the polishing solution onto the major surface of a polishing stage.