发明授权
US5479426A Semiconductor laser device with integrated reflector on a (511) tilted
lattice plane silicon substrate
失效
具有集成反射器的半导体激光器件（511）倾斜晶格面硅衬底
- 专利标题： Semiconductor laser device with integrated reflector on a (511) tilted lattice plane silicon substrate
- 专利标题（中）： 具有集成反射器的半导体激光器件（511）倾斜晶格面硅衬底
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申请号： US206052申请日： 1994-03-04
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公开(公告)号： US5479426A公开(公告)日： 1995-12-26
- 发明人: Hideyuki Nakanishi , Akio Yoshikawa , Hirokazu Shimizu
- 申请人： Hideyuki Nakanishi , Akio Yoshikawa , Hirokazu Shimizu
- 申请人地址： JPX Takatsuki
- 专利权人： Matsushita Electronics Corporation
- 当前专利权人： Matsushita Electronics Corporation
- 当前专利权人地址： JPX Takatsuki
- 主分类号： H01S5/02
- IPC分类号： H01S5/02 ; H01S5/022 ; H01S5/026 ; H01S5/18 ; H01S3/18
摘要：
Radiating light from a semiconductor laser element is radiated in a direction normal to the surface of a photodetector substrate. The semiconductor laser element and photodetector are disposed on the same plane. Specifically, a reflecting mirror surface formed of a slanting surface of (111) lattice plane having a ridge line of direction is disposed on a silicon substrate of (100) lattice plane having an off-angle of 4.degree. to 14.degree. about an axis of direction or on a silicon substrate of (511) lattice plane having an off-angle of 1.degree. to 11.degree. about an axis of direction. The semiconductor laser chip is disposed at a position opposing to the reflecting mirror surface.
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