Pressure differential downset apparatus

Invention Grant

US5481899A Pressure differential downset apparatus 失效

Title translation: 压差装置

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Patent Title: Pressure differential downset apparatus
Patent Title (中): 压差装置
Application No.: US245381

Application Date: 1994-06-27
Publication No.: US5481899A

Publication Date: 1996-01-09
Inventor: Guy Harris , Duane Callaway , Rajesh Shah
Applicant: Guy Harris , Duane Callaway , Rajesh Shah
Applicant Address: TX Dallas
Assignee: Texas Instruments Incorporated
Current Assignee: Texas Instruments Incorporated
Current Assignee Address: TX Dallas
Main IPC: H01L21/60
IPC: H01L21/60 ; B21J9/18

Abstract:

The edges of a semiconductor die are moved away from the lead frame leads attached to the die by using a pressure differential across the semiconductor die.

Abstract(Chinese):

半导体管芯的边缘通过使用半导体管芯上的压差而远离附接到管芯的引线框引线。

Public/Granted literature

US4394698A Apparatus for automatic inverting of cassettes Public/Granted day:1983-07-19

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/50	...应用H01L21/06至H01L21/326中的任一小组都不包含的方法或设备组装半导体器件的
H01L21/60	....引线或其他导电构件的连接，用于工作时向或由器件传导电流