发明授权
- 专利标题： Manufacturing method of semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US416488申请日： 1995-04-04
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公开(公告)号： US5484749A公开(公告)日： 1996-01-16
- 发明人: Kazuo Maeda , Noboru Tokumasu , Yuko Nishimoto
- 申请人： Kazuo Maeda , Noboru Tokumasu , Yuko Nishimoto
- 申请人地址： JPX all of JPX all of JPX all of
- 专利权人： Alcan-Tech Co., Inc.,Semiconductor Process Laboratory Co., Ltd.,Canon Sales Co., Inc.
- 当前专利权人： Alcan-Tech Co., Inc.,Semiconductor Process Laboratory Co., Ltd.,Canon Sales Co., Inc.
- 当前专利权人地址： JPX all of JPX all of JPX all of
- 优先权： JPX2-213343 19900810
- 主分类号： C23C16/02
- IPC分类号： C23C16/02 ; C23C16/34 ; C23C16/40 ; H01L21/302 ; H01L21/3065 ; H01L21/316 ; H01L21/02
摘要：
The present invention provides a method of manufacturing a semiconductor device, characterized in that, after a surface of a substrate is reformed by high frequency plasma irradiation while the substrate is heated, an organic silane and ozone are reacted to form a silicon oxide film on the substrate under normal pressure or reduced pressure. The present invention also provides a method of manufacturing a semiconductor device, characterized in that, after a surface of a substrate is reformed by high frequency plasma irradiation while heating the substrate, organic silane, gas containing dopants such as phosphorus or boron and ozone are mixed, and a PSG film, a BSG film, a BPSG film or the like is formed on the substrate under normal pressure or reduced pressure.
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