发明授权
- 专利标题： SiO.sub.2 electrets and process of making it
- 专利标题（中）： SiO2驻极体及其制造工艺
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申请号： US182707申请日： 1994-01-13
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公开(公告)号： US5486423A公开(公告)日： 1996-01-23
- 发明人: Jacques Lewiner , Didier Perino
- 申请人： Jacques Lewiner , Didier Perino
- 专利权人： Lewiner; Jacques,Perino; Didier
- 当前专利权人： Lewiner; Jacques,Perino; Didier
- 优先权： FRX9300297 19930114
- 主分类号： C23C16/40
- IPC分类号： C23C16/40 ; C23C16/56 ; H01G7/02 ; H04R19/01 ; B32B15/04 ; H05H1/24
摘要：
For making an SiO.sub.2 electret, a layer of SiO.sub.2 is formed on a solid substrate (5) by chemical vapor deposition in a vapor phase starting from a plasma containing silicon and oxygen and the layer so formed (10) is subjected to a thermal treatment by raising its temperature to above 100.degree. C. during a time period longer than 1 hour, before being electrically charged.
公开/授权文献
- US5008078A Integral multi-layer analysis element 公开/授权日：1991-04-16
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