A planarizing technique comprising: coating a topography overlying a substrate with a planarizing resist layer; softbaking the planarizing resist layer in the presence of a silicon-containing vapor or liquid; coating the planarizing resist layer with an imaging resist layer; softbaking the imaging resist; selectively exposing the imaging resist layer to light; developing the imaging resist layer; and etching the planarizing layer. The planarizing layer may comprise novolacs and other organic polymers used conventionally in lithographic processes. Specifically, the polymer is selected from the group consisting of a novolac, polymethylmethacrylate, polydimethylglutarimide and polyhydroxystyrene. The planarizing layer may further comprise any organic acid moiety that is compatible with the solvent used to dissolve the resin. In particular, the acid moiety is indole-3-carboxylic acid. In another aspect, the invention comprises a silylated planarizing resist. The resist comprises: a solution of a polymer and an acid, the polymer being selected from the group consisting of a novolac, polymethylmethacrylate, polyhydroxystyrene and polydimethylglutarimide and the acid concentration being homogeneous with respect to a horizontal surface of a substrate to which the solution is applied; and a silicon-rich layer, the layer being formed above the solution by the reaction of an organosilane with the acid.