发明授权
US5486487A Method for adjusting the threshold of a read-only memory to achieve low
capacitance and high breakdown voltage
失效
用于调整只读存储器的阈值以实现低电容和高击穿电压的方法
- 专利标题： Method for adjusting the threshold of a read-only memory to achieve low capacitance and high breakdown voltage
- 专利标题（中）： 用于调整只读存储器的阈值以实现低电容和高击穿电压的方法
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申请号： US139800申请日： 1993-10-19
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公开(公告)号： US5486487A公开(公告)日： 1996-01-23
- 发明人: Giancarlo Ginami , Enrico Laurin , Silvia Lucherini , Bruno Vajana
- 申请人： Giancarlo Ginami , Enrico Laurin , Silvia Lucherini , Bruno Vajana
- 申请人地址： ITX Milan
- 专利权人： SGS-Thomson Microelectronics S.r.l.
- 当前专利权人： SGS-Thomson Microelectronics S.r.l.
- 当前专利权人地址： ITX Milan
- 优先权： ITX19903/90 19900330
- 主分类号： G11C17/12
- IPC分类号： G11C17/12 ; H01L27/112 ; H01L21/266
摘要：
A method of manufacture of a low-capacitance programmed cell structure for read-only memory circuits comprises a field-effect transistor having conventional source and drain regions separated by a channel region overlaid by the gate of the transistor. This ROM memory cell is programmed by a channel implant extending only from the source region for a selected distance into the channel region.
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