Invention Grant
US5489362A Method for generating excited neutral particles for etching and
deposition processes in semiconductor technology with a plasma
discharge fed by microwave energy
失效
用于通过微波能量馈送的等离子体放电在半导体技术中产生用于蚀刻和沉积工艺的激发中性粒子的方法
- Patent Title: Method for generating excited neutral particles for etching and deposition processes in semiconductor technology with a plasma discharge fed by microwave energy
- Patent Title (中): 用于通过微波能量馈送的等离子体放电在半导体技术中产生用于蚀刻和沉积工艺的激发中性粒子的方法
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Application No.: US211472Application Date: 1994-08-29
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Publication No.: US5489362APublication Date: 1996-02-06
- Inventor: Heinz Steinhardt , Josef Mathuni
- Applicant: Heinz Steinhardt , Josef Mathuni
- Applicant Address: DEX Wien
- Assignee: Secon Halbleiterproduktionsgeraete Gesellschaft mbH
- Current Assignee: Secon Halbleiterproduktionsgeraete Gesellschaft mbH
- Current Assignee Address: DEX Wien
- Priority: DEX4132558.3 19910930
- Main IPC: E05D7/086
- IPC: E05D7/086 ; A45C13/00 ; B62D25/12 ; E05D11/08 ; E05F1/12 ; E05F5/00 ; F16C11/04 ; F16F1/14 ; H01J37/32 ; H01L21/205 ; H01L21/302 ; H01L21/3065 ; H05H1/46 ; H01L21/00
Abstract:
A plasma discharge tube (5) having a diameter that corresponds to a quarter wavelength of the standing wave is selected and the waveguide system (2) is dimensioned and tuned such that the standing wave forms a first voltage maximum at a first side of the plasma discharge tube (5) and the standing wave is also supplied reflected, so that it forms a second, anti-phase voltage maximum at a second side of the plasma discharge tube (5) that lies opposite the first side and faces toward an end termination (12) of the waveguide system (2). A controlled magnetic field is applied in order to achieve an especially low working pressure.
Public/Granted literature
- US4921318A Lens systems Public/Granted day:1990-05-01
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