发明授权
- 专利标题: Semiconductor memory device including a component having improved breakdown voltage characteristics
- 专利标题(中): 半导体存储器件包括具有改进的击穿电压特性的部件
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申请号: US151248申请日: 1993-11-12
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公开(公告)号: US5490116A公开(公告)日: 1996-02-06
- 发明人: Yoichi Tobita , Kenji Tokami
- 申请人: Yoichi Tobita , Kenji Tokami
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX4-338705 19921218
- 主分类号: G11C11/407
- IPC分类号: G11C11/407 ; G11C8/08 ; G11C8/18 ; G11C11/408 ; H01L21/822 ; H01L21/8242 ; H01L27/02 ; H01L27/04 ; H01L27/10 ; H01L27/108 ; G11C7/00
摘要:
In a semiconductor memory device including a boosting circuit for generating a high voltage constantly, and a word line driving circuit for transmitting a high voltage from the boosting circuit on a selected word line, a capacitor for stabilizing the high voltage generated by the boosting circuit is formed of a series of capacitive elements using a FET having a gate insulating film identical in thickness to that of a insulating gate type field effect transistor in the memory device. A voltage applied across each capacitive element is relaxed, and the capacitor is improved in dielectric breakdown voltage characteristics, to stably supply the high voltage.
公开/授权文献
- USPP4793P Spur type Red Rome apple tree--Peach Valley cultivar 公开/授权日:1981-11-24