The charge coupled device charge detection node includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type in the substrate; virtual gate regions of the first conductivity type formed in the second semiconductor layer, the virtual gate regions forming virtual phase potential areas; an insulating layer on the second semiconductor layer; a floating gate formed on the insulating layer, the floating gate is located above a portion of the second semiconductor layer that is between virtual gate regions, the floating gate forming a floating gate potential well in response to a voltage; a first transfer gate formed on the insulating layer and separated from the floating gate by a virtual gate region, the first transfer gate forming a transfer potential area in response to a voltage; and an electrode coupled to one of the virtual gate regions on the opposite side of the floating gate from the first transfer gate, the electrode increases the potential of the virtual phase potential area below the electrode in response to a voltage.