发明授权
- 专利标题： Method of manufacturing thin film transistors in a liquid crystal display apparatus
- 专利标题（中）： 在液晶显示装置中制造薄膜晶体管的方法
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申请号： US456836申请日： 1995-06-01
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公开(公告)号： US5496749A公开(公告)日： 1996-03-05
- 发明人: Yasuhiro Nasu , Teruhiko Ichimura , Tomotaka Matsumoto
- 申请人： Yasuhiro Nasu , Teruhiko Ichimura , Tomotaka Matsumoto
- 申请人地址： JPX Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX4-276884 19921015; JPX5-038795 19930226; JPX5-169288 19930708
- 主分类号： G02F1/1343
- IPC分类号： G02F1/1343 ; G02F1/136 ; G02F1/1368 ; H01L21/22 ; H01L21/223 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L29/78 ; H01L29/786 ; H01L21/786
摘要：
A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal .portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.
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