公开(公告)号：US5462885A

公开(公告)日：1995-10-31

申请号：US366914

申请日：1994-12-30

申请人： Yasuhiro Nasu ,  Teruhiko Ichimura ,  Tomotaka Matsumoto

发明人： Yasuhiro Nasu ,  Teruhiko Ichimura ,  Tomotaka Matsumoto

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/22 ,  H01L21/223 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/78 ,  H01L29/786 ,  H01L21/786

CPC分类号： H01L29/78696 ,  H01L21/2236 ,  H01L27/1214 ,  H01L29/66757 ,  G02F1/1368 ,  Y10S148/15

摘要： A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.

公开(公告)号：US5496749A

公开(公告)日：1996-03-05

申请号：US456836

申请日：1995-06-01

申请人： Yasuhiro Nasu ,  Teruhiko Ichimura ,  Tomotaka Matsumoto

发明人： Yasuhiro Nasu ,  Teruhiko Ichimura ,  Tomotaka Matsumoto

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/22 ,  H01L21/223 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/78 ,  H01L29/786 ,  H01L21/786

CPC分类号： H01L29/78696 ,  H01L21/2236 ,  H01L27/1214 ,  H01L29/66757 ,  G02F1/1368 ,  Y10S148/15

摘要： A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal .portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.

摘要翻译： 当形成栅电极和栅极总线时，使用第一片光掩模，当在栅电极上成为晶体管的有源层的半导体膜上进行构图时，使用第二片光掩模，第三片 当形成像素电极，源电极，漏电极，漏极总线和漏极总线端子部分时使用光掩模，并且当漏极总线端子部分上的膜，栅极 总线端子部分和像素部分被去除，从而形成以矩阵形式布置的薄膜晶体管。

公开(公告)号：US5407845A

公开(公告)日：1995-04-18

申请号：US135030

申请日：1993-10-13

申请人： Yasuhiro Nasu ,  Teruhiko Ichimura ,  Tomotaka Matsumoto

发明人： Yasuhiro Nasu ,  Teruhiko Ichimura ,  Tomotaka Matsumoto

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/22 ,  H01L21/223 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/78 ,  H01L29/786 ,  H01L21/265

CPC分类号： H01L29/78696 ,  H01L21/2236 ,  H01L27/1214 ,  H01L29/66757 ,  G02F1/1368 ,  Y10S148/15

摘要： A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.

摘要翻译： 当形成栅电极和栅极总线时，使用第一片光掩模，当在栅电极上成为晶体管的有源层的半导体膜上进行构图时，使用第二片光掩模，第三片 当形成像素电极，源电极，漏电极，漏极总线和漏极总线端子部分时使用光掩模，并且当漏极总线端子部分上的膜，栅极 总线端子部分和像素部分被去除，从而形成以矩阵形式布置的薄膜晶体管。

公开(公告)号：US5496752A

公开(公告)日：1996-03-05

申请号：US457264

申请日：1995-06-01

申请人： Yasuhiro Nasu ,  Teruhiko Ichimura ,  Tomotaka Matsumoto

发明人： Yasuhiro Nasu ,  Teruhiko Ichimura ,  Tomotaka Matsumoto

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/22 ,  H01L21/223 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/78 ,  H01L29/786 ,  H01L21/786

CPC分类号： H01L29/78696 ,  H01L21/2236 ,  H01L27/1214 ,  H01L29/66757 ,  G02F1/1368 ,  Y10S148/15

摘要： A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.

公开(公告)号：US5480818A

公开(公告)日：1996-01-02

申请号：US15512

申请日：1993-02-09

申请人： Tomotaka Matsumoto ,  Jun Inoue ,  Teruhiko Ichimura ,  Yuji Murata ,  Junichi Watanabe ,  Yoshio Nagahiro ,  Mari Hodate ,  Kenichi Oki ,  Masahiro Okabe

发明人： Tomotaka Matsumoto ,  Jun Inoue ,  Teruhiko Ichimura ,  Yuji Murata ,  Junichi Watanabe ,  Yoshio Nagahiro ,  Mari Hodate ,  Kenichi Oki ,  Masahiro Okabe

IPC分类号： H01L21/205 ,  H01L21/336 ,  H01L21/86 ,  H01L29/78 ,  H01L29/786

CPC分类号： C23C16/45525 ,  C23C16/403 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/86 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/7833 ,  H01L29/78621 ,  H01L29/78675 ,  H01L29/78678 ,  Y10S148/15 ,  Y10S148/169

摘要： A crystal silicon film deposited on an insulating film made of a binary system material or a binary system semiconductor film formed by an atomic layer deposition method has a grain as large as approximately 200 nm. Thus, the mobility of carriers is increased. The crystal silicon thereof is grown within a temperature range of 250.degree. C. to 400.degree. C. Accordingly, when a planar type thin film transistor, an inverted stagger type thin film transistor or a stagger type thin film transistor is formed using crystal silicon formed on these films made of a binary system material, transistor characteristics thereof are improved. Further, when an impurity containing silicon film is formed by a chemical vapor deposition method between a source electrode and a drain electrode of a thin film transistor and a silicon film connected to these electrodes, and a flow rate of impurity containing gas is regulated so that impurity density becomes larger as approaching to the source electrode and the drain electrode, a leakage current in an OFF-state of the transistor is reduced. Since the impurity containing silicon film is grown by a chemical vapor deposition method in this case, the impurity density thereof can be controlled easily and the control accuracy is also improved.

摘要翻译： 沉积在由二元系材料制成的绝缘膜上的晶体硅膜或通过原子层沉积法形成的二元系统半导体膜具有大至约200nm的晶粒。 因此，载波的移动性增加。 其晶体硅在250℃至400℃的温度范围内生长。因此，当使用形成的晶体硅形成平面型薄膜晶体管，反向交错型薄膜晶体管或交错型薄膜晶体管时 在由二元系材料制成的这些膜上，其晶体管特性得到改善。 此外，当通过化学气相沉积法在薄膜晶体管的源电极和漏电极与连接到这些电极的硅膜之间形成含硅膜的杂质时，调节含杂质气体的流量，使得 随着接近源电极和漏电极的杂质密度变大，晶体管截止状态下的漏电流减小。 由于在这种情况下通过化学气相沉积法生长含有杂质的硅膜，因此可以容易地控制其杂质浓度，并且还提高了控制精度。

公开(公告)号：US08288775B2

公开(公告)日：2012-10-16

申请号：US12509037

申请日：2009-07-24

申请人： Tomotaka Matsumoto ,  Tsukasa Eguchi

发明人： Tomotaka Matsumoto ,  Tsukasa Eguchi

IPC分类号： H01L27/14

CPC分类号： H01L27/14634 ,  H01L31/03685 ,  Y02E10/545 ,  Y02E10/548

摘要： A photoelectric conversion element includes a light receiving layer that is formed of microcrystal semiconductor, a first semiconductor layer of a first conductive type that is formed on one face side of the light receiving layer, and a first intermediate layer that is interposed between the first semiconductor layer and the light receiving layer and is formed of amorphous semiconductor.

摘要翻译： 光电转换元件包括由微晶半导体形成的光接收层，形成在光接收层的一个正面侧上的第一导电类型的第一半导体层和介于第一半导体之间的第一中间层 层和光接收层，并且由非晶半导体形成。

公开(公告)号：US20100155578A1

公开(公告)日：2010-06-24

申请号：US12634155

申请日：2009-12-09

申请人： Tomotaka Matsumoto

发明人： Tomotaka Matsumoto

IPC分类号： H01J40/02

CPC分类号： H01L27/14632 ,  H01L27/14623 ,  H01L27/14678 ,  H01L27/14687 ,  H01L27/14692 ,  H01L27/3234 ,  H01L27/3244 ,  H01L27/3248 ,  H01L2251/5315

摘要： A light source integrated photoelectric conversion apparatus is provided, which includes: a light-emitting element that includes a light-emitting layer, and emits light in a predetermined emission direction through one surface of the light-emitting layer; and a plurality of photoelectric conversion elements that includes a photoelectric conversion layer formed on a region which is not overlapped with the light-emitting layer, and converts light having passed through one surface of the photoelectric conversion layer into an electrical signal. In the light source integrated photoelectric conversion apparatus, the light-emitting element is formed on the same substrate as that of the plurality of photoelectric conversion element, one surface of the photoelectric conversion layer is disposed on the side opposite to the emission direction further away from the other surface of the light-emitting layer, and one surface of the light-emitting layer and the substrate face each other.

摘要翻译： 提供了一种光源集成光电转换装置，其包括：发光元件，其包括发光层，并且通过所述发光层的一个表面沿预定发射方向发光; 以及多个光电转换元件，其包括形成在不与发光层重叠的区域上的光电转换层，并将通过光电转换层的一个表面的光转换为电信号。 在光源集成光电转换装置中，发光元件形成在与多个光电转换元件相同的基板上，光电转换层的一个表面设置在与发射方向相反的一侧，远离 发光层的另一个表面和发光层和基板的一个表面彼此面对。

公开(公告)号：US09000541B2

公开(公告)日：2015-04-07

申请号：US13367741

申请日：2012-02-07

申请人： Yasunori Hattori ,  Tomotaka Matsumoto ,  Tsukasa Eguchi

发明人： Yasunori Hattori ,  Tomotaka Matsumoto ,  Tsukasa Eguchi

IPC分类号： H01L27/14 ,  H01L27/146

CPC分类号： H01L27/14632 ,  H01L27/14645

摘要： A photoelectric conversion device includes circuit portions disposed on a substrate, a first electrode electrically connected to one of the circuit portions, an optically transparent second electrode opposing the first electrode, and a photoelectric conversion portion disposed between the first electrode and the second electrode. The photoelectric conversion portion has a multilayer structure including a light absorption layer made of a p-type compound semiconductor film having a chalcopyrite structure, an amorphous oxide semiconductor layer, and a window layer made of an n-type semiconductor film.

摘要翻译： 光电转换装置包括设置在基板上的电路部分，电连接到电路部分之一的第一电极，与第一电极相对的光学透明的第二电极，以及设置在第一电极和第二电极之间的光电转换部分。 光电转换部具有包括由具有黄铜矿结构的p型化合物半导体膜，非晶氧化物半导体层和由n型半导体膜构成的窗口层的光吸收层的多层结构。

公开(公告)号：US08399821B2

公开(公告)日：2013-03-19

申请号：US12634155

申请日：2009-12-09

申请人： Tomotaka Matsumoto

发明人： Tomotaka Matsumoto

IPC分类号： H01L31/00 ,  H01L27/00

CPC分类号： H01L27/14632 ,  H01L27/14623 ,  H01L27/14678 ,  H01L27/14687 ,  H01L27/14692 ,  H01L27/3234 ,  H01L27/3244 ,  H01L27/3248 ,  H01L2251/5315

摘要： A light source integrated photoelectric conversion apparatus is provided, which includes: a light-emitting element that includes a light-emitting layer, and emits light in a predetermined emission direction through one surface of the light-emitting layer; and a plurality of photoelectric conversion elements that includes a photoelectric conversion layer formed on a region which is not overlapped with the light-emitting layer, and converts light having passed through one surface of the photoelectric conversion layer into an electrical signal. In the light source integrated photoelectric conversion apparatus, the light-emitting element is formed on the same substrate as that of the plurality of photoelectric conversion element, one surface of the photoelectric conversion layer is disposed on the side opposite to the emission direction further away from the other surface of the light-emitting layer, and one surface of the light-emitting layer and the substrate face each other.

摘要翻译： 提供了一种光源集成光电转换装置，其包括：发光元件，其包括发光层，并且通过所述发光层的一个表面沿预定发射方向发光; 以及多个光电转换元件，其包括形成在不与发光层重叠的区域上的光电转换层，并且将通过光电转换层的一个表面的光转换为电信号。 在光源集成光电转换装置中，发光元件形成在与多个光电转换元件相同的基板上，光电转换层的一个表面设置在与发射方向相反的一侧，远离 发光层的另一个表面和发光层和基板的一个表面彼此面对。

公开(公告)号：US07980911B2

公开(公告)日：2011-07-19

申请号：US12382039

申请日：2009-03-06

申请人： Tsuyoshi Maeda ,  Tomotaka Matsumoto

发明人： Tsuyoshi Maeda ,  Tomotaka Matsumoto

IPC分类号： H01L51/56

CPC分类号： H01L51/5271 ,  H01L27/3211 ,  H01L27/322 ,  H01L51/5206 ,  H01L51/5265 ,  H01L2251/5315 ,  H01L2251/558

摘要： A light emitting apparatus having light emitting devices having a stack of a light-transmitting anode, a functional layer including at least a light emitting layer, and a cathode for a plurality of pixels corresponding to red, green, and blue colors on a substrate, wherein an optical resonator having a lower-layer-side reflecting layer at a lower-layer side of the anode is formed in the light emitting device, wherein a plurality of the pixels include pixels which correspond to different thicknesses of a anode, and wherein a light-transmitting insulating protective film is formed between the anode and the lower-layer-side reflecting layer to cover the lower-layer-side reflecting layer.

摘要翻译： 一种具有发光装置的发光装置，具有发光阳极的堆叠，至少包括发光层的功能层和用于在基板上对应于红色，绿色和蓝色的多个像素的阴极， 其中在所述发光器件中形成具有在所述阳极的下层侧的下层侧反射层的光谐振器，其中所述多个像素包括对应于阳极的不同厚度的像素，并且其中 在阳极和下层侧反射层之间形成透光绝缘保护膜，以覆盖下层侧反射层。