发明授权
US5497124A Class AB push-pull drive circuit, drive method therefor and class AB
electronic circuit using the same
失效
AB类推挽驱动电路,其驱动方式和AB类电子电路使用相同
- 专利标题: Class AB push-pull drive circuit, drive method therefor and class AB electronic circuit using the same
- 专利标题(中): AB类推挽驱动电路,其驱动方式和AB类电子电路使用相同
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申请号: US366891申请日: 1994-12-30
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公开(公告)号: US5497124A公开(公告)日: 1996-03-05
- 发明人: Kazuo Yamashita , Nobuyuki Adachi , Masatoyo Nishibe , Masahiko Egawa , Akiharu Inoue
- 申请人: Kazuo Yamashita , Nobuyuki Adachi , Masatoyo Nishibe , Masahiko Egawa , Akiharu Inoue
- 申请人地址: JPX Tokyo
- 专利权人: Japan Radio Co., Ltd.
- 当前专利权人: Japan Radio Co., Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX6-004181 19940119; JPX6-144539 19940627
- 主分类号: H03F1/30
- IPC分类号: H03F1/30 ; H03F3/30 ; H03F3/45 ; H03F3/26
摘要:
A class AB push-pull drive circuit has two NPN transistors Q.sub.1, Q.sub.2 and two PNP transistors Q.sub.3, Q.sub.4, the emitters of which are connected together. A constant voltage circuit maintains voltages between the bases of transistors Q.sub.1 and Q.sub.3 and between the bases of transistors Q.sub.2 and Q.sub.4 constant. A differential input voltage is applied across the bases of the transistors Q.sub.1 and Q.sub.2. The collector currents in the transistors Q.sub.1, Q.sub.3, Q.sub.2 and Q.sub.4 increase or decrease in an exponential and differential manner. When the collector currents are in their differential relationship, they are inverted and added to provide a class AB drive current and to increase the output amplitude. The symmetry can also be improved. Since any difference between signal amplification path lengths is eliminated, a differential phase between paths is less likely to be generated in the high-frequency region. Since there is no feedback or the like for class AB drive, it is difficult for any abnormal oscillation to be produced. Since the constant voltage circuits are formed by diodes, the temperature characteristics of the transistors Q.sub.1 to Q.sub.4 can be compensated. Furthermore, the class AB push-pull drive circuit can be driven by a relatively low voltage. The bipolar transistors Q.sub.1 -Q.sub.4 may be replaced by FETs.
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