In a phase change type of optical recording medium including on a substrate a lower dielectric layer, a recording layer, a first upper dielectric layer contiguous to said recording layer, a second upper dielectric layer and a reflective layer, the recording layer comprises a recording material containing an element A that represents silver and/or gold, an element B that represents antimony and/or bismuth, an element C that represents tellurium and/or selenium, an element indium, and an element M that represents at least one element selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, manganese, tungsten and molybdenum, with the atomic ratio of the elements in said recording material having the following formula:{(A.sub.a B.sub.b C.sub.1-a-b).sub.x (In.sub.0.5 C.sub.0.5).sub.y B.sub.1-x-y }.sub.1-z M.sub.zwherein 0.10.ltoreq.a.ltoreq.0.40, 0.10.ltoreq.b.ltoreq.0.40, 0.20.ltoreq.x.ltoreq.0.80, 0.01.ltoreq.y.ltoreq.0.60, and 0.001.ltoreq.z.ltoreq.0.20. The first upper dielectric layer contains at least one compound selected from the group consisting of aluminum nitride, silicone nitride and aluminum oxide. The second upper dielectric layer is made up of a material that has a thermal conductivity lower than that of said first upper dielectric layer.