Invention Grant
US5502010A Method for heat treating a semiconductor substrate to reduce defects
失效
用于半导体衬底的热处理以减少缺陷的方法
- Patent Title: Method for heat treating a semiconductor substrate to reduce defects
- Patent Title (中): 用于半导体衬底的热处理以减少缺陷的方法
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Application No.: US91266Application Date: 1993-07-15
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Publication No.: US5502010APublication Date: 1996-03-26
- Inventor: Souichi Nadahara , Kikuo Yamabe , Hideyuki Kobayashi , Kunihiro Terasaka , Akihito Yamamoto , Naohiko Yasuhisa
- Applicant: Souichi Nadahara , Kikuo Yamabe , Hideyuki Kobayashi , Kunihiro Terasaka , Akihito Yamamoto , Naohiko Yasuhisa
- Applicant Address: JPX Kawasaki
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JPX Kawasaki
- Priority: JPX4-191118 19920717; JPX4-349538 19921228
- Main IPC: H01L21/223
- IPC: H01L21/223 ; C30B33/00 ; H01L21/322 ; H01L21/324 ; H01L21/477
Abstract:
A method of processing a semiconductor substrate includes the step of subjecting a semiconductor substrate to a heat treatment under a gaseous atmosphere. The method comprises the step of subjecting a semiconductor substrate to a high temperature heat treatment at temperatures not lower than 1100.degree. C. under a non-oxidizing atmosphere, wherein heat treatments before the high temperature heat treatment applied to the semiconductor substrate are applied under heat treating temperatures and heat treating time which fall within a region defined by a line connecting four points of (900.degree. C., 4 minutes), (800.degree. C., 40 minutes), (700.degree. C., 11 hours) and (600.degree. C., 320 hours) in a graph, in which the heat treating temperature is plotted on the abscissa and the heat treating time is plotted on the ordinate of the graph.
Public/Granted literature
- US5991182A Active rectifier having minimal energy losses Public/Granted day:1999-11-23
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