发明授权
- 专利标题： Film forming method wherein a partial pressure of a reaction byproduct in a processing container is reduced temporarily
- 专利标题（中）： 一种其中处理容器中的反应副产物的分压暂时降低的成膜方法
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申请号： US214109申请日： 1994-03-17
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公开(公告)号： US5503875A公开(公告)日： 1996-04-02
- 发明人: Masayuki Imai , Toshiharu Nishimura
- 申请人： Masayuki Imai , Toshiharu Nishimura
- 申请人地址： JPX Tokyo JPX Esashi
- 专利权人： Tokyo Electron Limited,Tokyo Electron Tohoku Limited
- 当前专利权人： Tokyo Electron Limited,Tokyo Electron Tohoku Limited
- 当前专利权人地址： JPX Tokyo JPX Esashi
- 优先权： JPX5-084052 19930318
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; C23C16/44 ; C23C16/458 ; H01L21/316 ; H01L21/318 ; C23C16/52
摘要：
A film is formed on a substrate by supplying a plurality of processing gases into a processing container and forming the film on the substrate from the processing gases while exhausting a portion of the gases out of the processing container. Before a partial pressure of a byproduct in the processing container produced through chemical reaction of the processing gases reaches an equilibrium state, the partial pressure of the byproduct in the processing container is temporarily reduced by temporarily suppressing or stopping the supply of at least one of the processing gases into the processing container and exhausting gas from the processing container.
公开/授权文献
- USD317291S Connector for a computer cable 公开/授权日：1991-06-04