Method of manufacturing a semiconductor device in which a semiconductor zone is formed through diffusion from a strip of polycrystalline silicon

发明授权

US5508213A Method of manufacturing a semiconductor device in which a semiconductor zone is formed through diffusion from a strip of polycrystalline silicon 失效

标题翻译：制造半导体器件的方法，其中通过从多晶硅条带扩散形成半导体区

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专利标题： Method of manufacturing a semiconductor device in which a semiconductor zone is formed through diffusion from a strip of polycrystalline silicon
专利标题（中）： 制造半导体器件的方法，其中通过从多晶硅条带扩散形成半导体区
申请号： US326440

申请日： 1994-10-20
公开(公告)号： US5508213A

公开(公告)日： 1996-04-16
发明人: Willem Van Der Wel , Alexander C. L. Jansen , Ronald Koster
申请人： Willem Van Der Wel , Alexander C. L. Jansen , Ronald Koster
申请人地址： NY New York
专利权人： U.S. Philips Corporation
当前专利权人： U.S. Philips Corporation
当前专利权人地址： NY New York
优先权： BEX09301135 19931025
主分类号： H01L29/73
IPC分类号： H01L29/73 ; H01L21/225 ; H01L21/285 ; H01L21/306 ; H01L21/331 ; H01L29/732 ; H01L21/265

Method of manufacturing a semiconductor device in which a semiconductor
zone is formed through diffusion from a strip of polycrystalline silicon

摘要：

A method of manufacturing a semiconductor device whereby on a surface (3) of a semiconductor body (1) a conductor track (21) of polycrystalline silicon insulated from the surface (3) is provided in a layer of doped polycrystalline silicon (11) provided on a layer of insulating material (10), and whereby a strip of polycrystalline silicon (19, 35) is formed between an edge (18) of the conductor (21) and a portion (24, 34) of the surface (3) adjoining the edge (18), after which a semiconductor zone (30) is formed through diffusion of dopant from the conductor (21) through the strip (19, 35) into the semiconductor body (1). During the formation of the insulated conductor (21) and the strip of polycrystalline silicon (19, 35), a window (15) is etched into the layer of polycrystalline silicon (11) by means of a first etching mask (13), after which the insulating layer (10) is removed from the surface (3) within the window (15), the window (15) is provided at its edge (18) with a strip of polycrystalline silicon (19, 35), and the conductor (21) is etched into the layer of polycrystalline silicon (11) by means of a second etching mask (20), this second etching mask (20) covering at least a portion of the edge (18) of the window (15). Further conductors (22, 23) may be formed in the polycrystalline layer (11) next to the insulated conductor (21), all conductors (21, 22, 23) being given dimensions such as defined by the second etching mask (20).

摘要（中）：

一种制造半导体器件的方法，其中在半导体本体（1）的与表面（3）绝缘的多晶硅的导体轨道（21）的表面（3）上设置有提供的掺杂多晶硅层（11）在一层绝缘材料（10）上，并且由此在导体（21）的边缘（18）和表面（3）的部分（24,34）之间形成多晶硅条（19,35）邻接边缘（18），之后通过掺杂剂从导体（21）穿过条带（19,35）扩散到半导体本体（1）中而形成半导体区域（30）。在形成绝缘导体（21）和多晶硅条（19,35）期间，通过第一蚀刻掩模（13）将窗口（15）蚀刻到多晶硅层（11）中，之后其中绝缘层（10）从窗口（15）内的表面（3）移除，窗口（15）在其边缘（18）处设置有多晶硅条（19,35），并且导体（21）通过第二蚀刻掩模（20）蚀刻到多晶硅层（11）中，该第二蚀刻掩模（20）覆盖窗口（15）的边缘（18）的至少一部分。另外的导体（22,23）可以形成在绝缘导体（21）旁边的多晶层（11）中，所有的导体（21,22,23）都具有由第二蚀刻掩模（20）限定的尺寸。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/70	...双极器件
H01L29/72	....晶体管型器件，如连续响应于所施加的控制信号的
H01L29/73	.....双极结型晶体管