发明授权
- 专利标题： Method for manufacturing a micro-electronic component having an electrically conductive tip of doped silicon
- 专利标题（中）： 用于制造具有掺杂硅的导电尖端的微电子部件的方法
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申请号： US275382申请日： 1994-07-15
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公开(公告)号： US5516404A公开(公告)日： 1996-05-14
- 发明人: Ignaz Eisele , Harald Gossner , Hermann Baumgaertner , Lothar Risch
- 申请人： Ignaz Eisele , Harald Gossner , Hermann Baumgaertner , Lothar Risch
- 申请人地址： DEX Munich
- 专利权人： Siemens Aktiengesellschaft
- 当前专利权人： Siemens Aktiengesellschaft
- 当前专利权人地址： DEX Munich
- 优先权： DEX4325708.9 19930730
- 主分类号： H01L21/203
- IPC分类号： H01L21/203 ; C30B23/02 ; H01J9/02 ; H01L21/20 ; H01L21/28 ; H01L21/306 ; H01L29/41
摘要：
A method for manufacturing an electrically conductive tip for field emission cathodes of vacuum electronic components includes forming the tip of doped silicon by molecular beam epitaxy of doped silicon through an opening of a mask and onto a substrate of monocrystalline silicon. The molecular beam epitaxy also produces a doped silicon layer on the surface of the mask.
公开/授权文献
- US4881046A Microwave linear amplifier with very wide pass band 公开/授权日：1989-11-14
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