发明授权
- 专利标题: Current mode test circuit for SRAM
- 专利标题(中): SRAM的电流模式测试电路
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申请号: US323053申请日: 1994-10-12
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公开(公告)号: US5519712A公开(公告)日: 1996-05-21
- 发明人: Lee-Lean Shu , Kurt Knorpp , Katsunori Seno
- 申请人: Lee-Lean Shu , Kurt Knorpp , Katsunori Seno
- 申请人地址: NJ Park Ridge
- 专利权人: Sony Electronics, Inc.
- 当前专利权人: Sony Electronics, Inc.
- 当前专利权人地址: NJ Park Ridge
- 主分类号: G01R31/28
- IPC分类号: G01R31/28 ; G11C11/413 ; G11C29/34 ; G11C29/38 ; G11C29/00
摘要:
A test circuit for a single chip semiconductor memory array, located in the chip, enables testing of all columns along a word lines without additional column readout circuits. A pair of current detecting differential amplifiers are connected to the bit lines of multiple memory cells along a word line, and the amplifier outputs are compared to generate a pass/fail signal during a read access.
公开/授权文献
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