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发明授权
US5523166A Process for forming thin film having excellent insulating property and metallic substrate coated with insulating material formed by said process 失效
用于形成具有优异绝缘性的薄膜的方法和涂覆有由所述方法形成的绝缘材料的金属基材

Process for forming thin film having excellent insulating property and metallic substrate coated with insulating material formed by said process
摘要：
A dense insulating thin film having a remarkably improved insulating property can be formed by a process comprising a first step of forming a first portion of an insulating thin film on a substrate by a sputtering process without exposing the substrate to a plasma or while irradiating the substrate with low energy particles and a second step of forming a second portion of the insulating thin film on the first portion while exposing the substrate to a plasma or while irradiating the substrate with high energy particles, thereby forming said insulating thin film on the substrate. The insulating property in terms of the dielectric breakdown voltage is 100 V or more as determined in a film thickness of 1 .mu.m or less and an area of 20 mm.sup.2.
摘要（中）：

可以通过包括以下步骤形成具有显着提高的绝缘性能的致密绝缘薄膜：第一步骤，通过溅射工艺在衬底上形成绝缘薄膜的第一部分，而不将衬底暴露于等离子体或同时照射衬底 并且在第一部分上形成绝缘薄膜的第二部分，同时将衬底暴露于等离子体或者同时用高能粒子照射衬底，从而在衬底上形成所述绝缘薄膜。 在介电击穿电压方面的绝缘性在膜厚为1μm以下，面积为20mm 2的情况下为100V以上。

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