发明授权
- 专利标题： Semiconductor optical device, manufacturing method for the same, and opto-electronic integrated circuit using the same
- 专利标题（中）： 半导体光学器件及其制造方法及使用其的光电集成电路
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申请号： US189865申请日： 1994-02-01
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公开(公告)号： US5523592A公开(公告)日： 1996-06-04
- 发明人: Kiyokazu Nakagawa , Akio Nishida , Toshikazu Shimada
- 申请人： Kiyokazu Nakagawa , Akio Nishida , Toshikazu Shimada
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX5-016524 19930203; JPX5-039631 19930301
- 主分类号： H01L27/15
- IPC分类号： H01L27/15 ; H01L33/34 ; H01S5/026 ; H01S5/183 ; H01S5/34 ; H01L33/00 ; H01L31/0312 ; H01S3/19
摘要：
By i) forming a layered structure of an undoped single crystalline Si layer and single crystalline Si.sub.0.8 Ge.sub.0.2 mixed crystal layer on an n-Si(100) substrate, a second undoped single crystalline Si layer on it, and a p type hydrogenated amorphous Si.sub.1-B C.sub.B layer on it, iii) mounting an n-Si.sub.0.55 Ge.sub.0.40 C.sub.0.05 layer on an n-Si(100) substrate and forming a layered structure of an undoped single crystalline Si.sub.0.55 Ge.sub.0.40 C.sub.0.05 layer and Si.sub.0.8 Ge.sub.0.2 layer, an undoped single crystalline Si.sub.0.55 Ge.sub.0.40 C.sub.0.05 layer, and a p-Si.sub.0.55 Ge.sub.0.40 C.sub.0.05 layer sequentially on it or iv) mounting an n type single crystalline Si layer on an n-Si(100) substrate and forming a layered structure of an undoped single crystalline Si layer and Si.sub.0.8 Ge.sub.0.1 Sn.sub.0.1 layer, an undoped single crystalline Si layer, and a p type single crystalline Si layer sequentially on it, a semiconductor optical device is obtained.
公开/授权文献
- US4805782A Cap shaping and drying apparatus 公开/授权日：1989-02-21
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