发明授权
US5527728A Method of making thin oxide portions consisting of gate and tunnel
oxides particularly in electrically erasable and programmable read-only
memory cells
失效
制造由栅极和隧道氧化物组成的薄氧化物部分的方法，特别是在电可擦除和可编程的只读存储器单元中
- 专利标题： Method of making thin oxide portions consisting of gate and tunnel oxides particularly in electrically erasable and programmable read-only memory cells
- 专利标题（中）： 制造由栅极和隧道氧化物组成的薄氧化物部分的方法，特别是在电可擦除和可编程的只读存储器单元中
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申请号： US329309申请日： 1994-10-26
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公开(公告)号： US5527728A公开(公告)日： 1996-06-18
- 发明人: Paolo Ghezzi , Federico Pio , Carlo Riva
- 申请人： Paolo Ghezzi , Federico Pio , Carlo Riva
- 申请人地址： ITX Agrate Brianza
- 专利权人： SGS-Thomson Microelectronics S.r.l.
- 当前专利权人： SGS-Thomson Microelectronics S.r.l.
- 当前专利权人地址： ITX Agrate Brianza
- 优先权： ITXMI91A3355 19911231
- 主分类号： H01L21/8247
- IPC分类号： H01L21/8247 ; H01L21/28 ; H01L21/336 ; H01L27/115 ; H01L29/788 ; H01L29/792
摘要：
A method for forming thin oxide portions in electrically erasable and programmable read-only memory cells, including the use of the enhanced oxidation effect and the lateral diffusion of heavy doping, for obtaining a tunnel portion whose dimensions are smaller than the resolution of the photolithographic method used.
公开/授权文献
- US4928087A Phase-stabilized, phase-coupled resonant circuit 公开/授权日：1990-05-22
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