发明授权
- 专利标题： Method for forming insulating film
- 专利标题（中）： 绝缘膜的形成方法
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申请号： US331737申请日： 1994-10-31
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公开(公告)号： US5532193A公开(公告)日： 1996-07-02
- 发明人: Kazuo Maeda , Noboru Tokumasu , Yoshiaki Yuyama
- 申请人： Kazuo Maeda , Noboru Tokumasu , Yoshiaki Yuyama
- 申请人地址： JPX all of JPX all of JPX all of
- 专利权人： Canon Sales Co., Inc.,Alcan-Tech Co., Inc.,Semiconductor Process Laboratory Co., Ltd.
- 当前专利权人： Canon Sales Co., Inc.,Alcan-Tech Co., Inc.,Semiconductor Process Laboratory Co., Ltd.
- 当前专利权人地址： JPX all of JPX all of JPX all of
- 优先权： JPX5-281157 19931110
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; C03C3/089 ; C23C16/40 ; H01L21/31 ; H01L21/316 ; H01L21/02
摘要：
The invention relates to a method for forming a BSG film by means of chemical vapor deposition, has an object which is to provide a film forming method making it possible to obtain a BSG film of high denseness and of low hygroscopicity even immediately after the film has been formed at a low temperature, and comprises a process of forming a borosilicate glass film (BSG film) on a substrate using a mixed gas of an organometallic compound having Si--O--B bond and ozone (O.sub.3).
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