发明授权
- 专利标题: Fluorinated silicon nitride films
- 专利标题(中): 氟化氮化硅膜
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申请号: US429449申请日: 1995-04-27
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公开(公告)号: US5539154A公开(公告)日: 1996-07-23
- 发明人: Son V. Nguyen , David M. Dobuzinsky , Douglas J. Dopp , David L. Harmon
- 申请人: Son V. Nguyen , David M. Dobuzinsky , Douglas J. Dopp , David L. Harmon
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: NY Armonk
- 主分类号: C23C14/06
- IPC分类号: C23C14/06 ; C23C16/34 ; C23C16/505 ; C30B25/02 ; H01L21/318 ; H01C7/10
摘要:
A plasma enhanced chemical vapor deposition process for producing a fluorinated silicon nitride film on a substrate is disclosed. The process utilizes a mixture of silane, perfluorosilane and nitrogen to produce films of high conformality and stability. The silane and perfluorosilane in the mixture are in a ratio of 0.05 to 1 on a volume basis. The preferred silane is SiH.sub.4 and the preferred perfluorosilane is SiF.sub.4. Films prepared by the process are disclosed and their properties are described.
公开/授权文献
- US5065192A Development apparatus with magnetically rotated skive 公开/授权日:1991-11-12
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