Invention Grant
US5548548A Pass transistor for a 256 megabit dram with negatively biased substrate
失效
传输晶体管为256兆字节与负偏置的基板
- Patent Title: Pass transistor for a 256 megabit dram with negatively biased substrate
- Patent Title (中): 传输晶体管为256兆字节与负偏置的基板
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Application No.: US358647Application Date: 1994-12-19
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Publication No.: US5548548APublication Date: 1996-08-20
- Inventor: Amitava Chatterjee , Jiann Liu , Purnendu Mozumder , Mark S. Rodder , Ih-Chin Chen
- Applicant: Amitava Chatterjee , Jiann Liu , Purnendu Mozumder , Mark S. Rodder , Ih-Chin Chen
- Applicant Address: TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: TX Dallas
- Main IPC: H01L29/78
- IPC: H01L29/78 ; G11C11/404 ; H01L21/8242 ; H01L27/108 ; H01L29/10 ; H01L29/423 ; G11C11/401
Abstract:
A design to attain a pass transistor for a 256 Mbit DRAM part. The transistor having a gate length of about 0.3 .mu.m, a t.sub.ox of about 85 .ANG., which is much thicker than the .about.65 .ANG. t.sub.ox for 0.25 .mu.m logic technology, a V.sub.WL of 3.75 V, a V.sub.sub of -1 V, arsenic LDD and a boron concentration in the channel region of about 2.7.times.10.sup.17 /cm.sup.3 are the desired technological choices for 256 Mbit DRAM devices.
Public/Granted literature
- US4969046A Television monitor system Public/Granted day:1990-11-06
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