发明授权
US5548557A Nonvolatile semiconductor memory device with a row redundancy circuit
失效
具有行冗余电路的非易失性半导体存储器件
- 专利标题: Nonvolatile semiconductor memory device with a row redundancy circuit
- 专利标题(中): 具有行冗余电路的非易失性半导体存储器件
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申请号: US179731申请日: 1994-01-11
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公开(公告)号: US5548557A公开(公告)日: 1996-08-20
- 发明人: Tomoshi Futatsuya , Masaaki Mihara , Yasushi Terada , Takeshi Nakayama , Yoshikazu Miyawaki , Shinichi Kobayashi , Minoru Ohkawa
- 申请人: Tomoshi Futatsuya , Masaaki Mihara , Yasushi Terada , Takeshi Nakayama , Yoshikazu Miyawaki , Shinichi Kobayashi , Minoru Ohkawa
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX5-003189 19930112; JPX5-176502 19930716; JPX5-275544 19931104
- 主分类号: G11C17/00
- IPC分类号: G11C17/00 ; G11C16/02 ; G11C16/06 ; G11C16/08 ; G11C29/00 ; G11C29/04
摘要:
A collective erasure type nonvolatile semiconductor memory device which allows use of redundant structure to word lines is provided. A row address buffer having address converting function simultaneously selects a plurality of physically adjacent word lines from a memory array in programming before erasure. Programming before erasure is effected on the memory cells on the simultaneously selected word lines. Even when physically adjacent word lines are short-circuited between each other, programming high voltage can be transmitted to the defective word lines, as these word lines are selected simultaneously. Therefore, the memory cells on the defective word lines can be programmed before erasure, so that over erasure at the time of collective erasing operation can be prevented. Thus, redundant structure for replacing defecting word lines by spare word lines can be utilized.